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KAI-2001-ABA-CP-BA

Onsemi

KAI-2001-ABA-CP-BA by Onsemi

KAI-2001-ABA-CP-BA by Onsemi is an Image Sensor with 7.4X7.4 um pixel size, 1600H x 1200V resolution, and 60 dB dynamic range. It operates at a supply voltage range of 14.5V to 15.5V, outputs analog voltage at a rate of 40 Mbps, and is suitable for applications requiring high-quality image capture in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 966 parts In-Stock

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Digiode

USA . 236 parts In-Stock

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TANS Electronics

Latvia . 7,479 parts In-Stock

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SupplyDigital Components

Austria . 5,936 parts In-Stock

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Kulean Microsystems

USA . 3,282 parts In-Stock

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Corphita

USA . 827 parts In-Stock

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Problanco Electronics

Mexico . 324 parts In-Stock

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UHIMA Technologies

Türkiye . 309 parts In-Stock

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Corohmni

South Africa . 297 parts In-Stock

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Overview

Discover the cutting-edge technology of the KAI-2001-ABA-CP-BA by Onsemi, a leading manufacturer in the industry. This Image Sensor boasts high-quality performance and precise imaging capabilities, making it ideal for a wide range of applications. From surveillance systems to medical imaging, this product offers unparalleled value and benefits to customers seeking superior image quality and reliability. Upgrade your imaging solutions with Onsemi's innovative KAI-2001-ABA-CP-BA Image Sensor today.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

The small pixel size results in high resolution images with fine details, making it suitable for high-quality imaging applications.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage allows for efficient operation and flexibility in power supply options.

Body Width: 20.32 inch

The compact body width makes it easy to integrate the image sensor into different devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their low noise and high sensitivity, resulting in superior image quality.

Body Height: 3.56 mm

The low body height allows for slim and compact design possibilities for the final product.

Package Shape or Style: RECTANGULAR

The rectangular shape makes it easy to mount and align the image sensor in various applications.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures power efficiency and compatibility with a range of power sources.

Horizontal Pixel: 1600

The high number of horizontal pixels allows for detailed and sharp images with excellent clarity.

Output Type: ANALOG VOLTAGE

Analog voltage output provides real-time data and compatibility with a wide range of interface systems.

Dynamic Range: 60 dB

The high dynamic range ensures accurate capturing of both bright and dark areas in the image.

Vertical Pixel: 1200

The high number of vertical pixels allows for capturing images with more height detail and resolution.

Body Length/Diameter: 33.02 mm

The moderate body length/diameter offers a balanced size for easy handling and integration.

Data Rate: 40 Mbps

The high data rate enables rapid image transfer and processing, suitable for real-time imaging applications.

Termination Type: SOLDER

Solder termination provides secure and reliable connections for stable performance in various environments.

Array Type: INTERLINE

Interline array type offers fast readout speeds and higher sensitivity, ideal for demanding imaging tasks.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature simplifies the integration process and ensures robust mechanical stability.

Technical Specifications

Image Sensors KAI-2001-ABA-CP-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 14 UV/ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

20.32 inch

Body Height:

3.56 mm

Body Length/Diameter:

33.02 mm

Data Rate:

40 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

1600

Mounting Feature:

Output Type:

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1200

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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