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KAI-47051-QXA-JD-B1

Onsemi

KAI-47051-QXA-JD-B1 by Onsemi

KAI-47051-QXA-JD-B1 by Onsemi is an image sensor with 5.5x5.5 um pixel size, 40 MHz master clock, and 66 dB dynamic range. Ideal for applications requiring high-resolution imaging in industrial cameras, surveillance systems, and scientific instruments due to its 8856 (H) x 5280 (V) pixel array and INTERLINE array type.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,417 parts In-Stock

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Digiode

USA . 1,959 parts In-Stock

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1,959

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Distributors (Availability)

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AZTECH Wire

Italy . 691 parts In-Stock

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$15.620

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691

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Kulean Microsystems

USA . 8,062 parts In-Stock

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SupplyDigital Components

Austria . 5,779 parts In-Stock

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TANS Electronics

Latvia . 2,870 parts In-Stock

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Corphita

USA . 2,478 parts In-Stock

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Problanco Electronics

Mexico . 988 parts In-Stock

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UHIMA Technologies

Türkiye . 290 parts In-Stock

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Corohmni

South Africa . 234 parts In-Stock

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Overview

Discover the unparalleled quality and performance of the KAI-47051-QXA-JD-B1 image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology that exceeds expectations. Ideal for a wide range of applications, this image sensor offers exceptional value with its high resolution, fast frame rate, and impressive dynamic range. Elevate your projects with the superior capabilities of the KAI-47051-QXA-JD-B1 and experience the ultimate in imaging excellence.

Feature Benefit Bullets

Pixel Size (um) 5.5X5.5

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage 15.5 V

Higher maximum supply voltage provides flexibility in power source options.

Master Clock 40 MHz

Fast master clock enables quick image capture and processing.

Body Width 44.55 inch

Compact body width makes it easy to integrate into various devices and systems.

Sensors or Transducers Type IMAGE SENSOR,CCD

CCD image sensor type ensures high-quality image output with accurate color representation.

Body Height 3.25 mm

Low body height allows for slim and sleek design options.

Package Shape or Style RECTANGULAR

Rectangular package shape for easy mounting and alignment.

Minimum Supply Voltage 14.5 V

Relatively low minimum supply voltage helps in reducing power consumption.

Maximum Operating Temperature 70 °C

High maximum operating temperature ensures reliable performance in various environments.

Minimum Operating Temperature -50 °C

Wide range of minimum operating temperature allows for use in extreme conditions.

Dynamic Range 66 dB

High dynamic range enables capturing a wide range of light intensities in a single image.

Vertical Pixel 5280

High vertical pixel count provides more detailed images with better clarity.

Body Length/Diameter 69.96 mm

Optimal body length/diameter ratio for a balanced design and easy installation.

Termination Type SOLDER

Solder termination type ensures secure and reliable connections.

Frame Rate 7 fps

Decent frame rate for capturing smooth and clear motion in videos.

Array Type INTERLINE

Interline array type for improved image quality and reduced noise.

Mounting Feature THROUGH HOLE MOUNT

Easy and secure through-hole mounting feature for stable placement in devices.

Technical Specifications

Image Sensors KAI-47051-QXA-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 38 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

44.55 inch

Body Height:

3.25 mm

Body Length/Diameter:

69.96 mm

Dynamic Range:

66 dB

Frame Rate:

7 fps

Horizontal Pixel:

8856

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

5280

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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