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KAI-4021-AAA-CR-BA

Onsemi

KAI-4021-AAA-CR-BA by Onsemi

The Onsemi KAI-4021-AAA-CR-BA is a 2048x2048 CCD image sensor with 7.4um pixel size, offering a dynamic range of 60dB. It operates b/w -50 °C to 70°C and has a data rate of 40Mbps. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,458 parts In-Stock

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Vyrian

USA . 1,069 parts In-Stock

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Kulean Microsystems

USA . 7,060 parts In-Stock

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Problanco Electronics

Mexico . 3,224 parts In-Stock

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SupplyDigital Components

Austria . 3,058 parts In-Stock

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TANS Electronics

Latvia . 3,048 parts In-Stock

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Corphita

USA . 2,458 parts In-Stock

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Corohmni

South Africa . 261 parts In-Stock

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UHIMA Technologies

Türkiye . 129 parts In-Stock

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Overview

Capture stunning images with the KAI-4021-AAA-CR-BA by Onsemi, a top-tier image sensor that delivers exceptional quality and performance. As a leading manufacturer in the industry, Onsemi ensures reliability and innovation in every product. Ideal for various applications, this image sensor provides unparalleled value with its high-resolution imaging capabilities and advanced features. Elevate your projects with the KAI-4021-AAA-CR-BA and experience the benefits of superior image quality and precision technology.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

A smaller pixel size allows for higher resolution images to be captured, making this image sensor ideal for applications where image clarity is important.

Body Width: 25.4 inch

The compact body width of 25.4 inch makes this image sensor suitable for installations where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CCD

The CCD image sensor type provides high-quality images with low noise levels, making it a reliable choice for various imaging applications.

Body Height: 4.95 mm

The low body height of 4.95 mm allows for easy integration into compact devices or systems.

Package Shape or Style: RECTANGULAR

The rectangular package shape provides a standardized form factor for easy integration and compatibility with existing designs.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this image sensor can withstand high temperature environments, making it suitable for a wide range of applications.

Horizontal Pixel: 2048

The high horizontal pixel count of 2048 enables detailed and sharp image capture, making this image sensor ideal for applications where image resolution is critical.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature of -50 °C ensures reliable performance even in extreme cold conditions.

Housing: CERAMIC

The ceramic housing provides durability and thermal stability, making this image sensor suitable for demanding environments.

Dynamic Range: 60 dB

The high dynamic range of 60 dB allows for capturing a wide range of light intensities, resulting in clear and detailed images.

Vertical Pixel: 2048

The vertical pixel count of 2048 complements the high horizontal pixel count, resulting in images with excellent resolution and clarity.

Body Length/Diameter: 35.56 mm

The compact body length/diameter of 35.56 mm allows for versatile mounting options and easy integration into different systems.

Data Rate: 40 Mbps

The high data rate of 40 Mbps enables fast and efficient data transfer, making this image sensor suitable for applications with high-speed imaging requirements.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections, making this image sensor suitable for rugged applications.

Array Type: INTERLINE

The interline array type provides fast readout speeds, reducing image lag and making this image sensor suitable for dynamic imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature provides secure and stable installation options, making this image sensor suitable for applications where stability is crucial.

Technical Specifications

Image Sensors KAI-4021-AAA-CR-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 31 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

25.4 inch

Body Height:

4.95 mm

Body Length/Diameter:

35.56 mm

Data Rate:

40 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

2048

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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