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KAF-0402-AAA-CB-B2

Onsemi

KAF-0402-AAA-CB-B2 by Onsemi

The Onsemi KAF-0402-AAA-CB-B2 is an image sensor with 9x9 um pixel size, 768 horizontal pixels, and 512 vertical pixels. It operates at a power supply of 14.75-15.5 V and offers a dynamic range of 76 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,803 parts In-Stock

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Vyrian

USA . 62 parts In-Stock

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Kulean Microsystems

USA . 7,486 parts In-Stock

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SupplyDigital Components

Austria . 4,421 parts In-Stock

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Corphita

USA . 1,887 parts In-Stock

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Problanco Electronics

Mexico . 1,674 parts In-Stock

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TANS Electronics

Latvia . 566 parts In-Stock

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Corohmni

South Africa . 205 parts In-Stock

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UHIMA Technologies

Türkiye . 6 parts In-Stock

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Overview

Unleash the power of high-quality imaging with the KAF-0402-AAA-CB-B2 by Onsemi. As a leader in image sensor technology, Onsemi brings you a top-of-the-line product that is perfect for a wide range of applications. From capturing stunning visuals to enhancing security systems, this image sensor offers unparalleled value, benefits, and advantages to customers. Trust Onsemi to deliver excellence in every pixel, ensuring that your imaging needs are met with precision and reliability. Elevate your projects with the KAF-0402-AAA-CB-B2 and experience the difference that superior technology can make.

Feature Benefit Bullets

Pixel Size (um): 9X9

Smaller pixel size allows for higher resolution images, making this image sensor suitable for applications that require detailed imaging.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage provides flexibility in power supply options and ensures stable performance even under varying voltage conditions.

Body Width: 20.19 inch

Compact body width allows for easy integration into different devices or systems without taking up too much space.

Power Supplies (V): 15

Standard power supply requirement of 15V makes it compatible with a wide range of power sources and simplifies the integration process.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image reproduction and low noise, making this product suitable for applications that require precise imaging.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easy mounting and alignment within devices, ensuring proper functionality and performance.

Minimum Supply Voltage: 14.75 V

Low minimum supply voltage requirement ensures that the image sensor can operate efficiently even with low power sources, making it versatile for various applications.

Horizontal Pixel: 768

High horizontal pixel count enables capturing detailed images with good clarity and sharpness, making this image sensor suitable for demanding imaging applications.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability, ensuring reliable performance even in harsh operating environments.

Dynamic Range: 76 dB

Wide dynamic range allows the image sensor to capture both bright and dark areas in the same image with good contrast and details, making it suitable for a variety of lighting conditions.

Vertical Pixel: 512

Vertical pixel count contributes to the overall image resolution and detail, making this image sensor suitable for capturing high-quality images with fine details.

Body Length/Diameter: 30.48 mm

Compact body length allows for easy integration and placement within devices, ensuring seamless operation and functionality.

Data Rate: 10 Mbps

High data rate enables fast and efficient data transfer, making this image sensor suitable for applications that require real-time image processing or high-speed imaging.

Termination Type: SOLDER

Solder termination ensures secure connections and reliable performance, reducing the risk of signal loss or connectivity issues.

Array Type: FULL FRAME

Full frame array type enables capturing the entire image in one go, ensuring accurate and complete image reproduction without any cropping or distortion.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides secure and stable mounting options, allowing for easy installation and ensuring proper alignment for optimal performance.

Technical Specifications

Image Sensors KAF-0402-AAA-CB-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 10 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

20.19 inch

Body Length/Diameter:

30.48 mm

Data Rate:

10 Mbps

Dynamic Range:

76 dB

Horizontal Pixel:

768

Housing:

CERAMIC

Mounting Feature:

Package Shape or Style:

Pixel Size (um):

9X9

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.75 V

Termination Type:

SOLDER

Vertical Pixel:

512

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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