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KAI-16070-CXA-JD-B1

Onsemi

KAI-16070-CXA-JD-B1 by Onsemi

KAI-16070-CXA-JD-B1 by Onsemi is an image sensor with 7.4x7.4 um pixel size, 40 MHz master clock, and 15.5 V max supply voltage. Ideal for applications requiring high-resolution imaging such as industrial machine vision systems or scientific cameras due to its impressive technical specifications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,440 parts In-Stock

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Vyrian

USA . 1,189 parts In-Stock

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Kulean Microsystems

USA . 7,331 parts In-Stock

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SupplyDigital Components

Austria . 4,298 parts In-Stock

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Problanco Electronics

Mexico . 4,274 parts In-Stock

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TANS Electronics

Latvia . 683 parts In-Stock

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Corohmni

South Africa . 472 parts In-Stock

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UHIMA Technologies

Türkiye . 319 parts In-Stock

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Corphita

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Overview

Unlock a world of possibilities with the KAI-16070-CXA-JD-B1 image sensor by Onsemi. Known for its exceptional quality and reliability, Onsemi delivers cutting-edge technology that enhances the performance of your imaging systems. Ideal for a variety of applications in industries such as automotive, security, and medical, this sensor offers unmatched value and benefits to customers seeking superior image quality, precise capturing capabilities, and reliable operation. Upgrade your imaging solutions with the KAI-16070-CXA-JD-B1 and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

This small pixel size allows for high resolution imaging and detailed pictures to be captured.

Maximum Supply Voltage: 15.5 V

With a high maximum supply voltage, this image sensor can handle a wide range of power inputs.

Master Clock: 40 MHz

A high master clock speed of 40 MHz ensures fast and efficient image processing.

Body Width: 45.34 inch

The compact body width makes this image sensor suitable for a range of applications where space is limited.

Power Supplies (V): 15

The power supply of 15 V ensures stable and reliable operation of the image sensor.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being a CCD image sensor, this product offers high quality imaging with low noise and excellent sensitivity.

Body Height: 3.61 mm

The low body height allows for easy integration into compact devices or systems.

Package Shape or Style: RECTANGULAR

The rectangular package shape is commonly used and provides ease of mounting and compatibility with various systems.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures that the image sensor can operate efficiently even under low power conditions.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70 °C, this image sensor can handle elevated temperature environments.

Horizontal Pixel: 4864

The high horizontal pixel count of 4864 enables high resolution images to be captured with sharp detail.

Minimum Operating Temperature: -50 °C

With a minimum operating temperature of -50 °C, this image sensor can withstand extreme cold environments.

Dynamic Range: 70.5 dB

A high dynamic range of 70.5 dB allows for capturing images with a wide range of lighting conditions and contrasts.

Vertical Pixel: 3232

The vertical pixel count of 3232 contributes to the high resolution and quality of images captured by this sensor.

Body Length/Diameter: 47.24 mm

The compact body length/diameter makes this image sensor easy to integrate into various devices and systems.

Optical Format (inch): 1.37

The optical format size of 1.37 inches is commonly used in many imaging applications and provides compatibility with standard optics.

Termination Type: SOLDER

The solder termination type ensures a secure and reliable connection between the image sensor and other components in the system.

Frame Rate: 8 fps

With a frame rate of 8 frames per second, this image sensor can capture motion and dynamic scenes effectively.

Array Type: INTERLINE

The interline array type offers fast readout speeds and reduced image lag for capturing moving objects or fast events.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature enables easy and secure installation of the image sensor onto circuit boards or mounting platforms.

Technical Specifications

Image Sensors KAI-16070-CXA-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 33 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT HAS OPTICAL FORMAT OF 1.37 INCH

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.61 mm

Body Length/Diameter:

47.24 mm

Dynamic Range:

70.5 dB

Frame Rate:

8 fps

Horizontal Pixel:

4864

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1.37

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

3232

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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