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KAI-02050-ABA-FD-BA

Onsemi

KAI-02050-ABA-FD-BA by Onsemi

Onsemi's KAI-02050-ABA-FD-BA is a 5.5x5.5 um CCD image sensor with 1684H x 1264V pixels, offering a dynamic range of 64 dB. It operates b/w -50 to 70 °C and has a supply voltage range of 14.5V to 15.5V, making it suitable for industrial imaging applications requiring high-resolution and low-light performance in a compact SQUARE package.

Median Price

$436.275

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3 parts In-Stock

1+ parts

$387.800

100+ parts

$364.530

1k+ parts

$341.260

10k+ parts

-

3

$387.800

$364.530

$341.260

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Verical

USA . 3 parts In-Stock

1+ parts

$484.750

100+ parts

$455.663

1k+ parts

$426.575

10k+ parts

-

3

$484.750

$455.663

$426.575

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,595 parts In-Stock

1+ parts

$364.012

100+ parts

-

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1,595

$364.012

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Vyrian

USA . 7,182 parts In-Stock

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-

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7,182

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,586 parts In-Stock

1+ parts

$344.853

100+ parts

-

1k+ parts

-

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1,586

$344.853

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Corohmni

South Africa . 74 parts In-Stock

1+ parts

$383.170

100+ parts

-

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-

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74

$383.170

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Continental Prestige Electronics

USA . 3 parts In-Stock

1+ parts

$383.170

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-

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3

$383.170

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-

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Kulean Microsystems

USA . 7,071 parts In-Stock

1+ parts

-

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7,071

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Problanco Electronics

Mexico . 6,372 parts In-Stock

1+ parts

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6,372

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TANS Electronics

Latvia . 5,068 parts In-Stock

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5,068

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UHIMA Technologies

Türkiye . 324 parts In-Stock

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324

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SupplyDigital Components

Austria . 313 parts In-Stock

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Overview

Experience unrivaled image quality and precision with the KAI-02050-ABA-FD-BA by Onsemi. As a leading manufacturer of image sensors, Onsemi delivers top-of-the-line products that exceed industry standards. Ideal for a wide range of applications, this CCD sensor offers unparalleled performance and reliability. With a compact square design and advanced features, this sensor provides exceptional value and benefits to customers looking to enhance their imaging capabilities. Trust Onsemi for cutting-edge technology that will take your projects to the next level.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Small pixel size allows for high resolution images with detailed information.

Maximum Supply Voltage: 15.5 V

Higher supply voltage provides ample power for efficient operation and performance.

Body Width: 18.29 inch

Wide body width provides stability and durability to the image sensor.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors offer high-quality imaging with low noise levels, making it suitable for various applications.

Body Height: 2.94 mm

Low body height allows for compact design and easy integration into devices.

Package Shape or Style: SQUARE

Square package shape ensures easy handling and uniform mounting on PCBs.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage ensures energy efficiency and reduces power consumption.

Maximum Operating Temperature: 70 °C

High operating temperature range allows for reliable performance in various environmental conditions.

Horizontal Pixel: 1684

High horizontal pixel count enables high-resolution imaging for detailed pictures.

Minimum Operating Temperature: -50 °C

Wide operating temperature range ensures functionality even in extreme cold conditions.

Housing: CERAMIC

Ceramic housing provides durability and protection for the image sensor.

Dynamic Range: 64 dB

High dynamic range enables capturing a wide range of light intensities with accurate details.

Vertical Pixel: 1264

Vertical pixel count contributes to the overall resolution and quality of images produced.

Body Length/Diameter: 18.29 mm

Compact body length/diameter allows for easy integration and space-saving design.

Optical Format (inch): 2/3

2/3 inch optical format provides compatibility with a wide range of lenses for versatile imaging options.

Termination Type: SOLDER

Solder termination type offers secure connections for reliable performance and durability.

Array Type: INTERLINE

Interline array type enables faster readout speeds and reduced blooming effects for high-quality images.

Mounting Feature: SURFACE MOUNT

Surface mounting feature allows for easy installation on PCBs and compact design in devices.

Technical Specifications

Image Sensors KAI-02050-ABA-FD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

18.29 inch

Body Height:

2.94 mm

Body Length/Diameter:

18.29 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1684

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1264

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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