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KAI-01050-ABA-JD-BA

Onsemi

KAI-01050-ABA-JD-BA by Onsemi

KAI-01050-ABA-JD-BA by Onsemi is an image sensor with 5.5x5.5 um pixel size, 1024x1024 resolution, and 64 dB dynamic range. It is ideal for digital voltage output applications in industrial cameras due to its rectangular shape, CCD technology, and solder termination type.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 521 parts In-Stock

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Digiode

USA . 392 parts In-Stock

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Flip Electronics

USA . 165 parts In-Stock

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Kulean Microsystems

USA . 6,528 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 3,185 parts In-Stock

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TANS Electronics

Latvia . 2,621 parts In-Stock

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Problanco Electronics

Mexico . 1,937 parts In-Stock

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Corphita

USA . 1,856 parts In-Stock

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UHIMA Technologies

Türkiye . 142 parts In-Stock

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Perfect Parts

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Corohmni

South Africa . 83 parts In-Stock

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Overview

Elevate your imaging projects with the KAI-01050-ABA-JD-BA by Onsemi. As a leading manufacturer of image sensors, Onsemi delivers top-notch quality and reliability in every product. This image sensor offers unparalleled value with its wide range of applications, from industrial to medical imaging. With a high dynamic range and precise pixel size, this sensor ensures crisp and clear images for your projects. Trust Onsemi for all your imaging needs and experience the difference in quality and performance.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Smaller pixel size allows for higher resolution images to be captured, making this image sensor suitable for applications where detailed images are required.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage provides flexibility in power supply options and ensures stable performance even under voltage fluctuations.

Body Width: 20.07 inch

Compact body width makes the sensor easy to integrate into various devices without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image capture and low noise performance, making this sensor a reliable choice for imaging applications.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easy and secure mounting of the sensor in devices or systems.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage ensures that the sensor can operate efficiently even in low power conditions.

Maximum Operating Temperature: 70 °C

Wide operating temperature range of up to 70 °C makes this sensor suitable for use in various environmental conditions.

Horizontal Pixel: 1024

High horizontal pixel count allows for detailed and sharp image capture in the horizontal direction.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies integration with digital systems and enables easy processing of captured images.

Minimum Operating Temperature: -50 °C

Wide minimum operating temperature range ensures that the sensor can function in extremely cold conditions without any issues.

Dynamic Range: 64 dB

High dynamic range allows the sensor to capture a wide range of light intensities, ensuring accurate representation of both bright and dark areas in the image.

Vertical Pixel: 1024

High vertical pixel count allows for detailed and sharp image capture in the vertical direction.

Body Length/Diameter: 33.02 mm

Moderate body length/diameter provides a good balance between compact size and ease of integration in different devices.

Optical Format (inch): 1/2

Optical format of 1/2 inch ensures compatibility with a wide range of lenses and optical systems, making this sensor versatile for various imaging applications.

Termination Type: SOLDER

Solder termination type allows for secure and reliable connections during integration, ensuring stable performance of the sensor.

Array Type: INTERLINE

Interline array type offers fast readout speed and reduced blooming effects, making this sensor suitable for high-speed imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides a secure and stable mounting option for the sensor, ensuring proper alignment and positioning within a device or system.

Technical Specifications

Image Sensors KAI-01050-ABA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Height:

3.33 mm

Body Length/Diameter:

33.02 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1024

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1/2

Output Type:

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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