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KAI-02150-CBA-JD-BA

Onsemi

KAI-02150-CBA-JD-BA by Onsemi

KAI-02150-CBA-JD-BA by Onsemi is an image sensor with 5.5x5.5 um pixel size, 1920 horizontal pixels, and 1080 vertical pixels. It operates b/w -50 to 70 °C with a dynamic range of 64 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

< 1k

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Digiode

USA . 362 parts In-Stock

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Chip Stock

USA . 198 parts In-Stock

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Vyrian

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Nova Conductors

Japan . 50 parts In-Stock

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AZTECH Wire

Italy . 499 parts In-Stock

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$7.351

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Semicontronic

India . 946 parts In-Stock

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$19.750

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$19.256

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Kulean Microsystems

USA . 4,857 parts In-Stock

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Problanco Electronics

Mexico . 3,178 parts In-Stock

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Continental Prestige Electronics

USA . 2,017 parts In-Stock

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SupplyDigital Components

Austria . 1,660 parts In-Stock

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Argo Parts USA

USA . 975 parts In-Stock

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TANS Electronics

Latvia . 863 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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UHIMA Technologies

Türkiye . 576 parts In-Stock

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Corohmni

South Africa . 329 parts In-Stock

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Corphita

USA . 124 parts In-Stock

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Overview

Enhance your imaging applications with the KAI-02150-CBA-JD-BA image sensor by Onsemi. With a reputation for top-quality manufacturing, Onsemi delivers cutting-edge technology in image sensors to meet the demands of various industries. This image sensor boasts a high pixel resolution and wide dynamic range, making it ideal for capturing detailed images in challenging lighting conditions. Whether you're in the medical, automotive, or security industry, this sensor offers unmatched value, precision, and reliability for your imaging needs. Upgrade your system today with the KAI-02150-CBA-JD-BA and experience the difference in performance and quality.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for high resolution and detailed images to be captured.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage provides flexibility in power supply options and can handle higher voltage inputs.

Power Supplies (V): 15

The power supply of 15V is commonly used in many electronic devices, making it compatible with a variety of systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image capture and low noise, making this product suitable for high-performance imaging applications.

Package Shape or Style: RECTANGULAR

The rectangular shape of the package allows for easy integration into electronic devices and circuit boards.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures efficient power usage and can accommodate lower voltage power sources.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature allows the sensor to be used in a wide range of environments and conditions without overheating.

Horizontal Pixel: 1920

Having a high horizontal pixel count results in detailed and clear images with sharp resolution.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature means the sensor can function effectively in cold environments without freezing or malfunctioning.

Dynamic Range: 64 dB

A high dynamic range of 64dB allows the sensor to capture a wide range of light intensities, ensuring accurate and detailed image reproduction.

Vertical Pixel: 1080

The high vertical pixel count contributes to the overall image clarity and quality, making it suitable for high-definition imaging.

Optical Format (inch): 2/3

The 2/3 inch optical format is a standard size in the industry, providing compatibility with a wide range of lenses and optical systems.

Termination Type: SOLDER

The solder termination type makes it easy to connect the sensor to other electronic components and ensures a secure and reliable connection.

Array Type: INTERLINE

The interline array type is known for its fast readout speed and low noise performance, making this sensor ideal for applications requiring quick image capturing.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and provides stability and durability when securing the sensor to a circuit board or device.

Technical Specifications

Image Sensors KAI-02150-CBA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Dynamic Range:

64 dB

Horizontal Pixel:

1920

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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