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KAI-16000-AAA-JD-B1

Onsemi

KAI-16000-AAA-JD-B1 by Onsemi

Onsemi's KAI-16000-AAA-JD-B1 is a 7.4x7.4 um pixel size CCD image sensor with 4872H x 3248V resolution and 65 dB dynamic range. It operates at supply voltages b/w 14.5V to 15.5V, making it ideal for high-quality imaging applications requiring precise analog voltage output at a data rate of up to 30 Mbps.

Median Price

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Lifecycle Status

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Digiode

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Vyrian

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Nova Conductors

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AZTECH Wire

Italy . 237 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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SupplyDigital Components

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Continental Prestige Electronics

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Argo Parts USA

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TANS Electronics

Latvia . 1,514 parts In-Stock

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UHIMA Technologies

Türkiye . 944 parts In-Stock

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Corohmni

South Africa . 498 parts In-Stock

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Bastille Electronics

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Overview

Unlock a world of endless possibilities with the KAI-16000-AAA-JD-B1 by Onsemi. Known for its superior quality and reliability, Onsemi is a trusted manufacturer in the field of image sensors. This cutting-edge product offers unparalleled performance and precision, making it ideal for a wide range of applications. Whether you're capturing stunning images or enhancing your security system, this image sensor delivers exceptional value, benefits, and advantages that will exceed your expectations. Experience the difference with Onsemi's KAI-16000-AAA-JD-B1.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

A smaller pixel size allows for higher resolution images with greater detail.

Maximum Supply Voltage: 15.5 V

Provides flexibility in power supply options and can handle higher voltage inputs.

Body Width: 45.34 inch

Compact size allows for easy integration into various devices and applications.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors provide high-quality images with low noise, making them great for capturing detailed photos.

Body Height: 4.88 mm

Low profile design allows for installation in slim devices or tight spaces.

Package Shape or Style: RECTANGULAR

Standard rectangular shape for easy mounting and compatibility with different systems.

Minimum Supply Voltage: 14.5 V

Wide voltage range ensures stable operation even under varying power conditions.

Horizontal Pixel: 4872

High horizontal pixel count results in sharp and detailed images.

Output Type: ANALOG VOLTAGE

Analog voltage output is easy to process and compatible with many applications.

Dynamic Range: 65 dB

Wide dynamic range allows for capturing both bright and dark areas in a scene accurately.

Vertical Pixel: 3248

High vertical pixel count adds to the overall image resolution and clarity.

Body Length/Diameter: 44.45 mm

Moderate size for a balanced form factor, suitable for various device designs.

Data Rate: 30 Mbps

High data rate enables fast and efficient transfer of image data for real-time applications.

Termination Type: SOLDER

Solder termination provides a reliable and secure connection for stable operation.

Array Type: INTERLINE

Interline array design reduces blooming and improves image quality, especially in high-contrast scenes.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting offers secure and durable installation for long-lasting performance.

Technical Specifications

Image Sensors KAI-16000-AAA-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 30 UV/ELECTRON

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

4.88 mm

Body Length/Diameter:

44.45 mm

Data Rate:

30 Mbps

Dynamic Range:

65 dB

Horizontal Pixel:

4872

Mounting Feature:

Output Type:

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

3248

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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