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KAI-1010

Onsemi

KAI-1010 by Onsemi

KAI-1010 by Onsemi is a 9x9 um CCD image sensor with 1008 horizontal and 1018 vertical pixels. It operates b/w -50 to 70 °C with a dynamic range of 60 dB. Ideal for applications requiring high-quality imaging in industrial and scientific fields.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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Digiode

USA . 208 parts In-Stock

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Problanco Electronics

Mexico . 8,361 parts In-Stock

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Corphita

USA . 893 parts In-Stock

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SupplyDigital Components

Austria . 759 parts In-Stock

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UHIMA Technologies

Türkiye . 708 parts In-Stock

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TANS Electronics

Latvia . 286 parts In-Stock

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Corohmni

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Kulean Microsystems

USA . 93 parts In-Stock

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Overview

Capture stunning images with the KAI-1010 by Onsemi, a top-of-the-line image sensor designed for superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this sensor offers unmatched quality and precision. Ideal for a wide range of applications, this sensor delivers exceptional value and benefits to customers looking for high-quality imaging solutions. Upgrade your imaging experience with the KAI-1010 and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 9X9

Smaller pixel size allows for higher resolution images to be captured with this sensor, making it suitable for applications where detail is important.

Maximum Supply Voltage: 15 V

Having a high maximum supply voltage allows for versatile power options and can handle fluctuations in power supply without affecting performance.

Body Width: 20.32 inch

Compact body width makes this sensor suitable for applications where space is limited, while still providing high-quality image capture.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image capture, making this sensor a reliable choice for demanding imaging applications.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easy integration into various electronic devices and systems, making it versatile for different applications.

Minimum Supply Voltage: 12 V

Low minimum supply voltage ensures efficient power consumption and can help extend the battery life of devices using this sensor.

Maximum Operating Temperature: 70 °C

High maximum operating temperature range allows for reliable performance even in challenging environments with fluctuations in temperature.

Horizontal Pixel: 1008

High number of horizontal pixels enables the sensor to capture detailed images with clarity and precision, suitable for a wide range of imaging applications.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature range ensures the sensor can function in freezing conditions without compromising performance.

Dynamic Range: 60 dB

Wide dynamic range allows the sensor to capture both dark and bright areas in an image accurately, resulting in high-quality and balanced images.

Vertical Pixel: 1018

High number of vertical pixels contributes to the sensor's ability to capture detailed images with sharpness and clarity, making it suitable for various imaging applications.

Body Length/Diameter: 30.48 mm

Compact body length/diameter ensures space-efficient design and easy integration into devices, without compromising on image capture capabilities.

Spectral Response (nm): 400-1000

Broad spectral response range allows the sensor to capture images across a wide range of wavelengths, making it versatile for different imaging applications.

Termination Type: SOLDER

Solder termination type ensures secure and reliable connections, minimizing the risk of signal loss or interference during operation.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature allows for easy and secure installation of the sensor onto circuit boards or other surfaces, ensuring stability during operation.

Technical Specifications

Image Sensors KAI-1010 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Body Width:

20.32 inch

Body Length/Diameter:

30.48 mm

Dynamic Range:

60 dB

Horizontal Pixel:

1008

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

12 V

Termination Type:

SOLDER

Vertical Pixel:

1018

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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