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KAI-43140-AXA-JD-B2

Onsemi

KAI-43140-AXA-JD-B2 by Onsemi

Onsemi's KAI-43140-AXA-JD-B2 is a 4.5x4.5 um CCD image sensor with 8040 (H) x 5360 (V) pixels, offering a dynamic range of 60 dB. Operating at temperatures from -50 to 70 °C, it has a data rate of 60 Mbps and is ideal for high-resolution imaging applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,605 parts In-Stock

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Digiode

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TANS Electronics

Latvia . 5,294 parts In-Stock

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Corphita

USA . 799 parts In-Stock

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Problanco Electronics

Mexico . 600 parts In-Stock

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Kulean Microsystems

USA . 579 parts In-Stock

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Corohmni

South Africa . 442 parts In-Stock

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UHIMA Technologies

Türkiye . 187 parts In-Stock

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SupplyDigital Components

Austria . 145 parts In-Stock

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Overview

Unleash the power of high-quality imaging with the KAI-43140-AXA-JD-B2 by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch image sensors that excel in a variety of applications. From capturing stunning visuals to ensuring precise data collection, this CCD image sensor offers unparalleled performance and reliability. Experience the value and benefits of superior image quality, advanced technology, and seamless integration with the KAI-43140-AXA-JD-B2. Elevate your imaging solutions with Onsemi's cutting-edge sensor technology today.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

Small pixel size allows for high resolution image capturing.

Maximum Supply Voltage: 15.5 V

Higher supply voltage ensures better performance and power management capabilities.

Body Width: 45.34 inch

Compact body width makes the sensor suitable for various applications.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors provide high-quality images with low noise levels.

Body Height: 3.61 mm

Low profile design allows for flexible integration in different devices.

Package Shape or Style: RECTANGULAR

Rectangular shape ensures easy mounting and aligning with other components.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage helps in reducing power consumption.

Maximum Operating Temperature: 70 °C

Wide operating temperature range provides reliability in various environments.

Horizontal Pixel: 8040

High pixel count ensures detailed image capture.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature allows for use in extreme cold conditions.

Maximum Operating Current: 11 mA

Low operating current helps in power efficiency.

Dynamic Range: 60 dB

Provides a wide dynamic range for capturing images in different lighting conditions.

Vertical Pixel: 5360

Vertical pixel count contributes to overall image quality and resolution.

Body Length/Diameter: 47.24 mm

Optimal body length for accommodating the sensor in various devices.

Optical Format (inch): 1.7

Standard optical format ensures compatibility with lenses and other optical components.

Data Rate: 60 Mbps

High data rate allows for fast image transfer and processing.

Termination Type: SOLDER

Solder termination ensures secure connection and reliability.

Array Type: INTERLINE

Interline array type provides high speed and efficient image capturing.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature simplifies installation and alignment of the sensor.

Technical Specifications

Image Sensors KAI-43140-AXA-JD-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT AS OUTPUT SENSITIVITY OF 42 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.61 mm

Body Length/Diameter:

47.24 mm

Data Rate:

60 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

8040

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1.7

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

5360

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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