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KAI-4011-ABA-CD-AE

Onsemi

KAI-4011-ABA-CD-AE by Onsemi

KAI-4011-ABA-CD-AE by Onsemi is a rectangular CCD image sensor with 2048x2048 pixels, 7.4um pixel size, and 60dB dynamic range. It operates b/w -50 °C to 70°C, has a data rate of 40 Mbps, and is suitable for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,081 parts In-Stock

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Vyrian

USA . 891 parts In-Stock

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Problanco Electronics

Mexico . 7,397 parts In-Stock

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Kulean Microsystems

USA . 6,282 parts In-Stock

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SupplyDigital Components

Austria . 3,693 parts In-Stock

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TANS Electronics

Latvia . 3,089 parts In-Stock

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Corphita

USA . 777 parts In-Stock

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Corohmni

South Africa . 415 parts In-Stock

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UHIMA Technologies

Türkiye . 101 parts In-Stock

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Overview

Capture the beauty of every moment with the KAI-4011-ABA-CD-AE by Onsemi. Crafted with precision and expertise, this cutting-edge Image Sensor redefines clarity and sharpness in photography and videography. Imagine the possibilities with its advanced technology, delivering unrivaled performance and exceptional image quality. Whether you're a professional photographer, filmmaker, or simply a photography enthusiast, this product offers unparalleled value and benefits that will elevate your creative vision to new heights. Experience the difference with Onsemi's reliable and innovative solutions in imaging technology.

Feature Benefit Bullets

Pixel Size (um)

Larger pixel size of 7.4um allows for better light sensitivity and higher image quality.

Body Width

Compact body width of 25.4 inches allows for easier integration into various systems or devices.

Sensors or Transducers Type

CCD image sensor type offers high quality images with low noise levels, making it suitable for precise imaging applications.

Body Height

Low body height of 4.95mm enables slim design options for the end product.

Package Shape or Style

Rectangular package shape offers ease of mounting and compatibility with standard interfaces.

Maximum Operating Temperature

Wide maximum operating temperature range of 70 °C ensures reliable performance in various environments.

Horizontal Pixel

High horizontal pixel count of 2048 results in sharp and detailed images.

Minimum Operating Temperature

Low minimum operating temperature of -50 °C allows for use in extreme temperature conditions.

Housing

Ceramic housing provides durability and thermal stability for the image sensor.

Dynamic Range

Wide dynamic range of 60dB enables capturing of both bright and dark areas accurately in the image.

Vertical Pixel

High vertical pixel count of 2048 ensures detailed image resolution in both horizontal and vertical directions.

Body Length/Diameter

Moderate body length/diameter of 35.56mm offers a balance between compact size and performance.

Data Rate

High data rate of 40 Mbps allows for quick transfer of image data, ideal for real-time imaging applications.

Termination Type

Solder termination type ensures secure and reliable connections for optimal performance.

Array Type

Interline array type offers fast readout speeds and high sensitivity, suitable for high-speed imaging.

Mounting Feature

Through hole mount feature provides easy and secure installation onto circuit boards or mounting surfaces.

Technical Specifications

Image Sensors KAI-4011-ABA-CD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 16 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

25.4 inch

Body Height:

4.95 mm

Body Length/Diameter:

35.56 mm

Data Rate:

40 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

2048

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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