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NOIP1SE0480A-STI1

Onsemi

NOIP1SE0480A-STI1 by Onsemi

NOIP1SE0480A-STI1 by Onsemi is a CMOS image sensor with 4.80x4.80 um pixel size, 68 MHz master clock, and 808 (H) x 608 (V) resolution. It operates b/w -40 to 85 °C and has a dynamic range of 59 dB. Ideal for applications requiring high-speed imaging in compact devices.

Median Price

$24.930

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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DigiKey

USA . 9 parts In-Stock

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Digiode

USA . 2,368 parts In-Stock

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$35.692

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Vyrian

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Corphita

USA . 2,404 parts In-Stock

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Corohmni

South Africa . 421 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 6,943 parts In-Stock

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Problanco Electronics

Mexico . 3,233 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 2,037 parts In-Stock

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UHIMA Technologies

Türkiye . 276 parts In-Stock

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Kepictronics

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Overview

Capture every moment with the NOIP1SE0480A-STI1 by Onsemi, a cutting-edge image sensor that delivers unparalleled quality and performance. Manufactured by industry leader Onsemi, this sensor is designed to meet the demands of a wide range of applications. Whether you're capturing stunning visuals for security systems, industrial automation, or consumer electronics, this sensor offers exceptional value and benefits. With its advanced technology and superior design, the NOIP1SE0480A-STI1 ensures that every image is clear, sharp, and detailed, making it the perfect choice for any project.

Feature Benefit Bullets

Pixel Size (um) 4.80X4.80

Small pixel size allows for high resolution images with fine details.

Maximum Supply Voltage 1.9 V

Efficient power management with low voltage requirement.

Master Clock 68 MHz

High clock frequency enables fast processing of image data.

Body Width 4.93 inch

Compact size for easy integration into different devices.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensor technology provides high quality image capture.

Body Height 0.75 mm

Slim profile for versatile mounting options.

Package Shape or Style RECTANGULAR

Traditional rectangular shape for easy handling and installation.

Minimum Supply Voltage 1.7 V

Low minimum voltage requirement for energy efficiency.

Maximum Operating Temperature 85 °C

Wide operating temperature range for versatile use in different environments.

Horizontal Pixel 808

High horizontal pixel count for detailed and sharp images.

Minimum Operating Temperature -40 °C

Operates in extreme low temperatures for reliable performance.

Terminal Finish TIN SILVER COPPER

Durable terminal finish for long-lasting connections.

Maximum Operating Current 59 mA

Low operating current for energy efficiency.

Dynamic Range 59 dB

Wide dynamic range for capturing both bright and dark areas in a scene.

Vertical Pixel 608

High vertical pixel count for detailed images with depth.

Body Length/Diameter 6.13 mm

Optimal size for good balance of performance and compactness.

Optical Format (inch) 1/3.6

Standard optical format suitable for a wide range of applications.

Data Rate 68 Mbps

High data rate for fast transmission of image data.

Termination Type SOLDER

Secure solder termination for reliable connections.

Output Interface Type 4-WIRE INTERFACE

Versatile 4-wire interface for easy integration with other hardware.

Frame Rate 120 fps

High frame rate for smooth and clear video capture.

Array Type FULL FRAME

Full frame array for capturing the entire image in one go.

Mounting Feature SURFACE MOUNT

Surface mountable for easy and secure installation.

Technical Specifications

Image Sensors NOIP1SE0480A-STI1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3V NOMINAL SUPPLY VOLTAGE; IT ALSO HAVE MASTER CLOCK 340 MHZ (10-BIT) AND 272 MHZ (8-BIT) WHEN PLL IS NOT USED

Array Type:

FULL FRAME

Body Width:

4.93 inch

Body Height:

.75 mm

Body Length/Diameter:

6.13 mm

Data Rate:

68 Mbps

Dynamic Range:

59 dB

Frame Rate:

120 fps

Horizontal Pixel:

808

JESD-609 Code:

e1

Master Clock:

68 MHz

Mounting Feature:

Maximum Operating Current:

59 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3.6

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

608

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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