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CYII5SC1300AB-QDC

Onsemi

CYII5SC1300AB-QDC by Onsemi

CYII5SC1300AB-QDC by Onsemi is an image sensor with 1280x1024 pixels, 6.7x6.7um pixel size, and 40MHz master clock. It operates b/w -30 to 65 °C, outputs digital voltage from 0.50-2.20V, and has a dynamic range of 64dB. Ideal for applications requiring high-resolution imaging in industrial automation and surveillance systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,261 parts In-Stock

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Vyrian

USA . 928 parts In-Stock

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Northwest PG Solutions

USA . 139 parts In-Stock

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$3.034

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139

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Problanco Electronics

Mexico . 7,349 parts In-Stock

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SupplyDigital Components

Austria . 5,878 parts In-Stock

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TANS Electronics

Latvia . 4,359 parts In-Stock

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Kulean Microsystems

USA . 3,345 parts In-Stock

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Corphita

USA . 1,351 parts In-Stock

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Native Components

USA . 286 parts In-Stock

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UHIMA Technologies

Türkiye . 270 parts In-Stock

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Corohmni

South Africa . 78 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the CYII5SC1300AB-QDC image sensor by Onsemi. Crafted with precision and expertise, this innovative product offers unparalleled quality and performance in capturing stunning visuals. Ideal for a wide range of applications, from surveillance systems to medical imaging, this sensor delivers exceptional value and benefits to customers seeking superior image quality and reliability. Elevate your projects to the next level with the CYII5SC1300AB-QDC and experience the advantages of Onsemi's dedication to excellence in every detail.

Feature Benefit Bullets

Pixel Size (um): 6.7X6.7

Smaller pixel size allows for higher resolution imaging and better sharpness in the final images.

Maximum Supply Voltage: 4.5 V

Allows for a wide range of power supply options, making it versatile for different applications.

Master Clock: 40 MHz

High master clock speed enables fast data processing and transmission, leading to quick and efficient image capture.

Body Width: 15.24 inch

Compact body width makes it suitable for applications where space is a constraint.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors are known for their low power consumption, high integration, and fast readout speeds, making them ideal for various imaging applications.

Body Height: 2.25 mm

Low body height allows for easy integration into thin devices or systems.

Package Shape or Style: SQUARE

Square package shape provides better symmetry and ease of mounting compared to irregular shapes.

Minimum Supply Voltage: 3 V

Low minimum supply voltage helps in reducing power consumption and extending battery life in portable devices.

Maximum Operating Temperature: 65 °C

High maximum operating temperature ensures reliable performance even in harsh environmental conditions.

Horizontal Pixel: 1280

High horizontal pixel count provides detailed and high-quality images with sharpness and clarity.

Output Range: 0.50-2.20V

A wide output range allows for capturing images in varying lighting conditions with good color reproduction.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies the interface with other digital systems for easy data processing and transmission.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures the sensor can function in extreme cold conditions without any issues.

Maximum Operating Current: 60 mA

Low maximum operating current leads to efficient power consumption and longer battery life in the device.

Housing: CERAMIC

Ceramic housing offers excellent durability and thermal conductivity for reliable and long-lasting performance.

Dynamic Range: 64 dB

High dynamic range captures a wide range of light intensities in a single image, providing clear details in both dark and bright areas.

Vertical Pixel: 1024

High vertical pixel count enhances image resolution for better quality and detailed images.

Body Length/Diameter: 15.24 mm

Compact body length/diameter allows for easy integration and flexibility in various system designs.

Optical Format (inch): 2/3

2/3 inch optical format is commonly used in professional imaging applications, ensuring compatibility and quality performance.

Data Rate: 40 Mbps

High data rate enables fast and efficient image transfer for real-time applications and high-speed imaging.

Termination Type: SOLDER

Solder termination provides secure and reliable connections for stable operation and longevity.

Output Interface Type: 3-WIRE INTERFACE

3-wire interface offers easy connectivity and communication with other devices or systems for seamless integration.

Frame Rate: 27 fps

Optimal frame rate ensures smooth and high-quality video output for various imaging and recording applications.

Array Type: FULL FRAME

Full frame array type provides uniform image quality across the entire sensor surface for consistent and accurate imaging results.

Sensitivity (V/lx.s): 8.4 V/lx.s

High sensitivity allows the sensor to capture clear and detailed images even in low light conditions or fast-moving subjects.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies the installation process and allows for easy integration into various devices or systems.

Technical Specifications

Image Sensors CYII5SC1300AB-QDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC SHUTTER, GLOBAL SHUTTER

Array Type:

FULL FRAME

Body Width:

15.24 inch

Body Height:

2.25 mm

Body Length/Diameter:

15.24 mm

Data Rate:

40 Mbps

Dynamic Range:

64 dB

Frame Rate:

27 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

65 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

2/3

Output Interface Type:

3-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6.7X6.7

Sensitivity (V/lx.s):

8.4 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

4.5 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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