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KAI-04070-PBA-JD-AE

Onsemi

KAI-04070-PBA-JD-AE by Onsemi

The Onsemi KAI-04070-PBA-JD-AE is a 7.4x7.4 um CCD image sensor with 2048x2048 pixels, offering an optical format of 4/3 inch and a dynamic range of 82 dB. It features an interline array type, solder termination, and through-hole mounting, suitable for high-resolution imaging applications in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,409 parts In-Stock

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Vyrian

USA . 762 parts In-Stock

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SupplyDigital Components

Austria . 8,226 parts In-Stock

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TANS Electronics

Latvia . 7,928 parts In-Stock

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Kulean Microsystems

USA . 7,588 parts In-Stock

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Corphita

USA . 1,456 parts In-Stock

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Problanco Electronics

Mexico . 483 parts In-Stock

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Corohmni

South Africa . 376 parts In-Stock

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UHIMA Technologies

Türkiye . 82 parts In-Stock

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Overview

Elevate your imaging experience with the KAI-04070-PBA-JD-AE by Onsemi. This cutting-edge image sensor boasts unparalleled quality and reliability, thanks to the renowned manufacturer's dedication to excellence. Ideal for a wide range of applications in industries such as automotive, industrial, and surveillance, this product offers customers exceptional value with its high performance, precision, and versatility. Upgrade your imaging solutions today and unleash the full potential of your projects with the KAI-04070-PBA-JD-AE.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Smaller pixel size provides higher resolution images, making this image sensor suitable for applications requiring detailed image capture.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for high-quality image capture, making this product ideal for industries where image accuracy is crucial.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easier integration into various devices and systems, providing versatility in usage.

Dynamic Range: 82 dB

A high dynamic range of 82 dB ensures that the sensor can accurately capture both dark and bright areas in an image, providing excellent image quality.

Optical Format (inch): 4/3

The 4/3 optical format is a common standard, making this sensor compatible with a wide range of lenses and optical equipment.

Termination Type: SOLDER

Solder termination provides a secure connection, minimizing the risk of connectivity issues and ensuring reliable performance.

Array Type: INTERLINE

Interline array type allows for faster image readout, reducing image lag and improving overall image capture speed.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature provides a sturdy and secure installation method, ideal for applications where the sensor may experience vibrations or movements.

Technical Specifications

Image Sensors KAI-04070-PBA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 8.7 MICRO VOLT PER ELECTRON LOW, 33 MICRO VOLT PER ELECTRON HIGH

Array Type:

INTERLINE

Dynamic Range:

82 dB

Horizontal Pixel:

2048

Mounting Feature:

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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