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NOII5SM1300A-QWC

Onsemi

NOII5SM1300A-QWC by Onsemi

NOII5SM1300A-QWC by Onsemi is a 2/3 inch CMOS image sensor with 1280x1024 pixels, 40 MHz master clock, and 27 fps frame rate. It operates at 3-3.6V with a sensitivity of 8.4 V/lx.s. Ideal for applications requiring high-resolution imaging in industrial automation and surveillance systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,970 parts In-Stock

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Vyrian

USA . 1,567 parts In-Stock

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Problanco Electronics

Mexico . 8,014 parts In-Stock

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SupplyDigital Components

Austria . 6,568 parts In-Stock

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TANS Electronics

Latvia . 5,464 parts In-Stock

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Kulean Microsystems

USA . 1,779 parts In-Stock

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Corphita

USA . 728 parts In-Stock

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Corohmni

South Africa . 262 parts In-Stock

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UHIMA Technologies

Türkiye . 71 parts In-Stock

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Overview

Capture every detail with the NOII5SM1300A-QWC Image Sensor by Onsemi. Designed with precision and expertise, this sensor offers unparalleled quality and reliability for a wide range of applications. Whether you're in automotive, security, or industrial imaging, this sensor delivers outstanding performance and exceptional value. Trust Onsemi to provide cutting-edge technology that exceeds expectations and elevates your projects to new heights. Experience the difference with the NOII5SM1300A-QWC Image Sensor today.

Feature Benefit Bullets

Pixel Size (um) 6.7X6.7

Smaller pixel size allows for higher resolution images with more details.

Maximum Supply Voltage 3.6 V

Optimal maximum supply voltage for efficient power usage and performance.

Master Clock 40 MHz

High master clock frequency enables fast data processing and image capture.

Body Width 15.24 inch

Compact size for easy integration into various devices and systems.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS image sensor technology offers high sensitivity and low noise for superior image quality.

Body Height 2.8 mm

Low profile design for flexible installation in space-constrained environments.

Package Shape or Style SQUARE

Square package shape allows for efficient layout and space utilization.

Minimum Supply Voltage 3 V

Low minimum supply voltage for energy-efficient operation and extended battery life.

Maximum Operating Temperature 65 °C

Wide operating temperature range for reliable performance in various environmental conditions.

Horizontal Pixel 1280

High horizontal pixel count for detailed and sharp images.

Output Range 0.50-2.20V

Wide output voltage range for versatile compatibility with different systems and applications.

Output Type ANALOG VOLTAGE

Analog voltage output for easy interface with analog circuits and devices.

Minimum Operating Temperature 0 °C

Low minimum operating temperature for reliable performance in cold environments.

Maximum Operating Current 60 mA

Low operating current for energy-efficient operation and reduced power consumption.

Housing CERAMIC

Durable ceramic housing for protection against environmental factors and mechanical damage.

Vertical Pixel 1024

High vertical pixel count for capturing detailed images with depth and clarity.

Body Length/Diameter 15.24 mm

Compact and streamlined design for easy integration and space-saving installation.

Optical Format (inch) 2/3

Optical format compatible with standard lenses for easy customization and integration.

Termination Type SOLDER

Solder termination for secure and reliable connection in electronic circuits.

Output Interface Type 3-WIRE INTERFACE

3-wire interface for easy connectivity with external devices and systems.

Frame Rate 27 fps

High frame rate for smooth and fluid video recording and fast moving object capture.

Array Type FRAME

Frame array type for efficient image capture and processing.

Sensitivity (V/lx.s) 8.4 V/lx.s

High sensitivity for accurate and detailed image capture in various lighting conditions.

Mounting Feature SURFACE MOUNT

Surface mounting feature for easy and secure installation on PCBs and other surfaces.

Technical Specifications

Image Sensors NOII5SM1300A-QWC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

15.24 inch

Body Height:

2.8 mm

Body Length/Diameter:

15.24 mm

Frame Rate:

27 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

65 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

2/3

Output Interface Type:

3-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6.7X6.7

Sensitivity (V/lx.s):

8.4 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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