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NOII5FM1300A-QDC

Onsemi

NOII5FM1300A-QDC by Onsemi

NOII5FM1300A-QDC by Onsemi is an image sensor with 1280x1024 resolution, 6.7um pixel size, and 40MHz master clock. It operates b/w 0-65 °C, outputs analog voltage in the range of 0.50-2.20V, and uses a 3-wire interface. Ideal for applications requiring high-resolution imaging in industrial automation and surveillance systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,961 parts In-Stock

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Digiode

USA . 1,207 parts In-Stock

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AZTECH Wire

Italy . 1,179 parts In-Stock

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$16.750

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Kulean Microsystems

USA . 6,889 parts In-Stock

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Problanco Electronics

Mexico . 1,931 parts In-Stock

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TANS Electronics

Latvia . 1,903 parts In-Stock

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Corphita

USA . 1,522 parts In-Stock

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SupplyDigital Components

Austria . 1,453 parts In-Stock

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Corohmni

South Africa . 312 parts In-Stock

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UHIMA Technologies

Türkiye . 156 parts In-Stock

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Overview

Unlock unparalleled image quality and performance with the NOII5FM1300A-QDC by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge image sensors that offer exceptional clarity and reliability. Ideal for a wide range of applications, this CMOS image sensor boasts a high pixel resolution and advanced features to enhance your imaging experience. Experience the value and benefits of superior image capture with the NOII5FM1300A-QDC - the perfect choice for professionals seeking top-tier quality and precision.

Feature Benefit Bullets

Pixel Size (um): 6.7X6.7

Smaller pixel size allows for higher resolution images to be captured, making this image sensor ideal for applications where fine details need to be captured.

Maximum Supply Voltage: 3.6 V

Higher maximum supply voltage provides flexibility in power supply options and supports stable operation of the image sensor.

Master Clock: 40 MHz

High master clock frequency enables fast data readout and processing speed, resulting in quick image capture and transmission.

Body Width: 15.24 inch

Compact body width allows for easy integration into various devices and systems without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology provides high sensitivity, low noise, and low power consumption, making it suitable for a wide range of imaging applications.

Body Height: 2.8 mm

Low body height enables thin and sleek device designs, making this image sensor suitable for applications where space is limited.

Package Shape or Style: SQUARE

Square package shape offers mechanical stability and ease of mounting, enhancing the durability and reliability of the image sensor.

Minimum Supply Voltage: 3 V

Low minimum supply voltage helps in extending battery life and reducing power consumption, making this image sensor energy-efficient.

Maximum Operating Temperature: 65 °C

Wide operating temperature range ensures reliable performance in various environmental conditions, expanding the versatility of this image sensor.

Horizontal Pixel: 1280

High horizontal pixel count allows for detailed and sharp images to be captured, making this image sensor suitable for applications requiring high image quality.

Output Range: 0.50-2.20V

Wide output range provides flexibility in signal processing and compatibility with different systems, ensuring accurate image data capture.

Output Type: ANALOG VOLTAGE

Analog voltage output enables easy integration with analog signal processing circuits, making this image sensor versatile and compatible with a wide range of applications.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature allows for reliable performance in cold environments, making this image sensor suitable for use in diverse temperature conditions.

Maximum Operating Current: 60 mA

Moderate maximum operating current ensures efficient power consumption and helps in preventing overheating, optimizing the performance and longevity of the image sensor.

Housing: CERAMIC

Ceramic housing offers durability, thermal stability, and protection against harsh environmental conditions, enhancing the reliability and lifespan of the image sensor.

Vertical Pixel: 1024

High vertical pixel count contributes to capturing detailed images with excellent resolution, making this image sensor suitable for applications requiring precise image quality.

Body Length/Diameter: 15.24 mm

Compact body length/diameter allows for easy integration and installation in various devices and systems, ensuring seamless implementation of the image sensor.

Optical Format (inch): 2/3

Large optical format provides a wide field of view and high light-gathering capability, making this image sensor ideal for applications requiring extensive image coverage and superior low-light performance.

Termination Type: SOLDER

Solder termination type offers secure and reliable electrical connections, ensuring stable signal transmission and minimizing the risk of signal loss or interference.

Output Interface Type: 3-WIRE INTERFACE

3-wire interface type provides compatibility with standard communication protocols and simplifies the integration of the image sensor with other devices, facilitating seamless data transfer.

Frame Rate: 27 fps

High frame rate enables smooth and real-time image capture, making this image sensor suitable for applications requiring fast-moving object tracking or high-speed imaging.

Array Type: FRAME

Frame array type offers efficient image capture and processing, enabling the image sensor to deliver high-quality images with minimal distortion or artifacts.

Sensitivity (V/lx.s): 8.4 V/lx.s

High sensitivity allows the image sensor to capture clear and bright images even in low-light conditions, making it ideal for applications requiring high-quality images in challenging lighting environments.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies the installation and integration of the image sensor onto PCBs, ensuring secure placement and easy assembly in electronic devices.

Technical Specifications

Image Sensors NOII5FM1300A-QDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

15.24 inch

Body Height:

2.8 mm

Body Length/Diameter:

15.24 mm

Frame Rate:

27 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

65 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

2/3

Output Interface Type:

3-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6.7X6.7

Sensitivity (V/lx.s):

8.4 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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