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MT9V111D00ATCK82AC1-305

Onsemi

MT9V111D00ATCK82AC1-305 by Onsemi

MT9V111D00ATCK82AC1-305 by Onsemi is a 640x480 CMOS image sensor with 5.6um pixel size, 27 MHz master clock, and 60dB dynamic range. Ideal for digital cameras, surveillance systems, and machine vision applications due to its high sensitivity and frame rate of 30 fps.

Median Price

$0.160

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 4,293 parts In-Stock

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USA . 4,293 parts In-Stock

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Vyrian

USA . 283 parts In-Stock

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Flip Electronics

USA . 4,293 parts In-Stock

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Digiode

USA . 2,036 parts In-Stock

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Corohmni

South Africa . 229 parts In-Stock

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TANS Electronics

Latvia . 6,125 parts In-Stock

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Kulean Microsystems

USA . 5,032 parts In-Stock

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Problanco Electronics

Mexico . 4,177 parts In-Stock

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SupplyDigital Components

Austria . 1,724 parts In-Stock

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Corphita

USA . 1,652 parts In-Stock

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UHIMA Technologies

Türkiye . 180 parts In-Stock

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Overview

Capture every moment with the high-quality MT9V111D00ATCK82AC1-305 Image Sensor by Onsemi. From crystal-clear images to vibrant colors, this sensor offers unmatched performance and reliability. Whether you're designing security cameras, barcode scanners, or medical imaging devices, this sensor delivers precise results in any application. With a wide operating temperature range and low power consumption, this sensor is a cost-effective solution that never compromises on quality. Elevate your products with the best in image sensor technology from Onsemi.

Feature Benefit Bullets

Pixel Size (um) 5.6X5.6

Larger pixel size allows for better light sensitivity and higher image quality, especially in low light conditions.

Maximum Supply Voltage 3.05 V

Allows for safe and efficient operation within the specified voltage range.

Master Clock 27 MHz

High master clock frequency ensures fast and accurate data processing.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensors provide low power consumption, high-quality images, and fast data readout speed.

Minimum Supply Voltage 2.55 V

Provides flexibility in power supply options while maintaining stable performance.

Maximum Operating Temperature 60 °C

Wide operating temperature range allows for use in various environments without compromising performance.

Horizontal Pixel 640

High horizontal pixel count results in sharper and more detailed images.

Output Type DIGITAL VOLTAGE

Digital voltage output simplifies data processing and integration with other systems.

Minimum Operating Temperature -20 °C

Withstand low temperatures, making it suitable for applications in cold environments.

Maximum Operating Current 20 mA

Low operating current ensures energy efficiency and reduces power consumption.

Dynamic Range 60 dB

Wide dynamic range allows for capturing both bright and dark areas in an image without overexposure or underexposure.

Vertical Pixel 480

High vertical pixel count enhances image resolution and overall image quality.

Spectral Response (nm) 550

Optimized spectral response at 550nm ensures accurate color reproduction in images.

Optical Format (inch) 1/4

Standard optical format size makes it compatible with a wide range of imaging systems and applications.

Termination Type SOLDER

Solder termination provides a reliable and robust connection for long-term use.

Output Interface Type 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with other devices or systems.

Frame Rate 30 fps

High frame rate of 30 frames per second ensures smooth and real-time video capture.

Array Type FRAME

Frame array type allows for capturing multiple images at once and processing them efficiently.

Sensitivity (V/lx.s) 1.9 V/lx.s

High sensitivity of 1.9 V/lx.s results in accurate and detailed image capture even in low light conditions.

Technical Specifications

Image Sensors MT9V111D00ATCK82AC1-305 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Dynamic Range:

60 dB

Frame Rate:

30 fps

Horizontal Pixel:

640

Master Clock:

27 MHz

Maximum Operating Current:

20 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-20 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Pixel Size (um):

5.6X5.6

Sensitivity (V/lx.s):

1.9 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

550

Maximum Supply Voltage:

3.05 V

Minimum Supply Voltage:

2.55 V

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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