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CYIS1SM0250AA-HHCS

Onsemi

CYIS1SM0250AA-HHCS by Onsemi

CYIS1SM0250AA-HHCS by Onsemi is an Image Sensor with 25um pixel size, 8 MHz master clock, and 512x512 resolution. Ideal for applications requiring high-quality digital imaging in a compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,019 parts In-Stock

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Digiode

USA . 428 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 387 parts In-Stock

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$7.230

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387

$7.230

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TANS Electronics

Latvia . 7,517 parts In-Stock

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Kulean Microsystems

USA . 7,459 parts In-Stock

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Problanco Electronics

Mexico . 5,067 parts In-Stock

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Northwest PG Solutions

USA . 2,102 parts In-Stock

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$7.085

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SupplyDigital Components

Austria . 738 parts In-Stock

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738

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Corphita

USA . 628 parts In-Stock

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Corohmni

South Africa . 464 parts In-Stock

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UHIMA Technologies

Türkiye . 29 parts In-Stock

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Overview

Discover the unparalleled quality of the CYIS1SM0250AA-HHCS by Onsemi, a cutting-edge image sensor designed to exceed your expectations. With its advanced technology and superior manufacturing by Onsemi, this sensor offers unmatched performance in a variety of applications. From security cameras to medical imaging, this product delivers exceptional value, benefits, and advantages to customers seeking reliability and precision. Elevate your projects with the CYIS1SM0250AA-HHCS and experience the difference that quality makes in your work.

Feature Benefit Bullets

Pixel Size: 25 um

Smaller pixel size allows for higher resolution images to be captured, making this image sensor suitable for applications requiring detailed image quality.

Maximum Supply Voltage: 5 V

With a high maximum supply voltage, this image sensor can operate efficiently with a wide range of power sources, providing flexibility in integration.

Master Clock: 8 MHz

The high master clock frequency enables fast data processing and capture speed, making this image sensor suitable for high-speed imaging applications.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies interfacing with other digital systems, enhancing compatibility and ease of use for integration.

Dynamic Range: 74 dB

A high dynamic range allows for capturing a wide range of light intensities accurately, making this image sensor suitable for applications where lighting conditions vary.

Frame Rate: 30 fps

With a high frame rate, this image sensor can capture fast-moving subjects with smooth motion, making it ideal for applications requiring real-time imaging.

Technical Specifications

Image Sensors CYIS1SM0250AA-HHCS attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC SHUTTER

Array Type:

FULL FRAME

Body Width:

28.7 inch

Body Height:

1.178 mm

Body Length/Diameter:

29.21 mm

Data Rate:

8 Mbps

Dynamic Range:

74 dB

Frame Rate:

30 fps

Horizontal Pixel:

512

JESD-609 Code:

e4

Master Clock:

8 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

25

Sensors or Transducers Type:

Maximum Supply Voltage:

5 V

Minimum Supply Voltage:

3.3 V

Terminal Finish:

Gold (Au)

Termination Type:

SOLDER

Vertical Pixel:

512

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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