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KAI-16070-FXA-JD-B1

Onsemi

KAI-16070-FXA-JD-B1 by Onsemi

KAI-16070-FXA-JD-B1 by Onsemi is an image sensor with 7.4X7.4 um pixel size, 40 MHz master clock, and 70.5 dB dynamic range. Ideal for applications requiring high-resolution imaging in industrial cameras or scientific instruments due to its 4864x3232 pixel resolution and INTERLINE array type.

Median Price

$24,708.690

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 2 parts In-Stock

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Verical

USA . 2 parts In-Stock

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$24,708.690

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2

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Distributors (In-Stock)

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Digiode

USA . 610 parts In-Stock

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$23,473.256

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610

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Vyrian

USA . 8,940 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 312 parts In-Stock

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$22,237.821

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312

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Corohmni

South Africa . 129 parts In-Stock

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129

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SupplyDigital Components

Austria . 6,601 parts In-Stock

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Problanco Electronics

Mexico . 5,221 parts In-Stock

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TANS Electronics

Latvia . 2,432 parts In-Stock

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Kulean Microsystems

USA . 1,970 parts In-Stock

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UHIMA Technologies

Türkiye . 147 parts In-Stock

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Overview

Experience unparalleled image quality with the KAI-16070-FXA-JD-B1 by Onsemi, a leading manufacturer in the industry. This cutting-edge image sensor is perfect for a wide range of applications, delivering crisp and detailed images with a dynamic range of 70.5 dB. Say goodbye to blurry photos and hello to crystal-clear visuals. Enhance your projects with the KAI-16070-FXA-JD-B1 and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Small pixel size allows for high resolution images with fine details.

Maximum Supply Voltage: 15.5 V

Wide voltage range provides flexibility in power supply options.

Master Clock: 40 MHz

High master clock frequency enables fast data readout and processing.

Body Width: 45.34 inch

Compact body width makes the sensor suitable for space-constrained applications.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors are known for high-quality image capture and low noise performance.

Body Height: 3.61 mm

Low body height allows for easy integration into various systems.

Package Shape or Style: RECTANGULAR

Rectangular package shape provides ease of mounting and alignment.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage helps in power efficiency and extends battery life.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Horizontal Pixel: 4864

High horizontal pixel count results in detailed and sharp images.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature allows the sensor to be used in extreme cold environments.

Dynamic Range: 70.5 dB

Wide dynamic range captures both bright and dark areas accurately without losing details.

Vertical Pixel: 3232

High vertical pixel count enhances image clarity and depth.

Body Length/Diameter: 47.24 mm

Compact body length/diameter ensures the sensor can fit in compact devices.

Optical Format (inch): 1.37

Optical format corresponds to the sensor's sensor size and aspect ratio, ensuring compatibility with lenses and optical systems.

Termination Type: SOLDER

Solder termination allows for easy and reliable connectivity during installation.

Frame Rate: 8 fps

Decent frame rate for capturing real-time video or fast-moving objects with smooth motion.

Array Type: INTERLINE

Interline array type minimizes blooming and smearing effects, ensuring high-quality imaging.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting offers secure and stable installation for the sensor in various systems.

Technical Specifications

Image Sensors KAI-16070-FXA-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 33 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT HAS OPTICAL FORMAT 1.37 INCH, IT HAS EXTENDED LINEAR DYNAMIC RANGE 82.5 DB

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.61 mm

Body Length/Diameter:

47.24 mm

Dynamic Range:

70.5 dB

Frame Rate:

8 fps

Horizontal Pixel:

4864

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1.37

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

3232

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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