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MT9M021IA3XTMZ-TPBR

Onsemi

MT9M021IA3XTMZ-TPBR by Onsemi

MT9M021IA3XTMZ-TPBR by Onsemi is a 1/3 inch CMOS image sensor with 1280x960 resolution, 3.75um pixel size, and 50MHz master clock. Ideal for applications requiring high-quality digital imaging at up to 60fps, it operates b/w -30 to 70°C with a dynamic range of 64dB.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,245 parts In-Stock

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Digiode

USA . 1,190 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Ampacity Inc.

Singapore . 1,425 parts In-Stock

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$8.750

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AZTECH Wire

Italy . 455 parts In-Stock

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$9.226

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TANS Electronics

Latvia . 7,259 parts In-Stock

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Problanco Electronics

Mexico . 3,481 parts In-Stock

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SupplyDigital Components

Austria . 1,619 parts In-Stock

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Kulean Microsystems

USA . 1,231 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Corphita

USA . 345 parts In-Stock

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Corohmni

South Africa . 219 parts In-Stock

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UHIMA Technologies

Türkiye . 9 parts In-Stock

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Overview

Capture life's most precious moments with the MT9M021IA3XTMZ-TPBR image sensor by Onsemi. Known for their top-notch quality and cutting-edge technology, Onsemi delivers exceptional products that excel in performance and reliability. Ideal for various applications in the imaging industry, this image sensor offers unparalleled value, superior benefits, and unmatched advantages to customers. Whether you're a professional photographer, a tech enthusiast, or a security system integrator, this sensor provides crystal-clear images, high sensitivity, and a wide dynamic range to meet all your imaging needs. Elevate your projects with the MT9M021IA3XTMZ-TPBR and experience the difference Onsemi makes in imaging technology.

Feature Benefit Bullets

Pixel Size (um): 3.75

Small pixel size enables higher resolution and better image quality.

Maximum Supply Voltage: 1.95 V

Allows for efficient power usage and compatibility with various systems.

Master Clock: 50 MHz

High master clock frequency enables fast data processing and high frame rates.

Body Width: 10 inch

Compact size for easy integration into different devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology provides low power consumption and high sensitivity.

Body Height: 1.38 mm

Slim profile for flexibility in design and installation.

Package Shape or Style: SQUARE

Square package is easy to mount and provides efficient use of space.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage for energy-efficient operation.

Maximum Operating Temperature: 70 °C

Wide operating temperature range for versatility in different environments.

Horizontal Pixel: 1280

High horizontal pixel count for detailed and sharp image capture.

Output Type: DIGITAL VOLTAGE

Digital output for easy integration with digital systems.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature for use in extreme cold conditions.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

High-quality terminal finish for reliable connections and durability.

Maximum Operating Current: 55 mA

Low operating current for efficient power usage.

Dynamic Range: 64 dB

Wide dynamic range for capturing both bright and dark areas with detail.

Vertical Pixel: 960

High vertical pixel count for better image resolution.

Body Length/Diameter: 10 mm

Compact size for easy integration and space-saving design.

Optical Format (inch): 1/3

Standard optical format for compatibility with various lenses.

Termination Type: SOLDER

Solder termination for secure connections.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface for simple and efficient communication with external devices.

Frame Rate: 60 fps

High frame rate for smooth and fluid video capture.

Array Type: FRAME

Frame array design for efficient image capture and processing.

Sensitivity (V/lx.s): 5.3 V/lx.s

High sensitivity for better low-light performance and image quality.

Mounting Feature: SURFACE MOUNT

Surface mount design for easy and secure installation.

Technical Specifications

Image Sensors MT9M021IA3XTMZ-TPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.5 V TO 3.1 V

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.38 mm

Body Length/Diameter:

10 mm

Dynamic Range:

64 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

55 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensitivity (V/lx.s):

5.3 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

960

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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