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MT9T031C12STC-DR

Onsemi

MT9T031C12STC-DR by Onsemi

Onsemi's MT9T031C12STC-DR is a 3.20x3.20 um CMOS image sensor with 2048H x 1536V pixels, offering a dynamic range of 61 dB and operating at a max clock speed of 48 MHz. It has a digital voltage output interface, suitable for frame array applications in devices requiring high-resolution imaging capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,622 parts In-Stock

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Digiode

USA . 190 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Aztec Data Supply Inc.

USA . 4,279 parts In-Stock

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$1.790

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$1.790

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Semicontronic

India . 145 parts In-Stock

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$8.750

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$8.531

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$8.488

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145

$8.750

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$8.488

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AZTECH Wire

Italy . 629 parts In-Stock

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$12.907

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629

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Ampacity Inc.

Singapore . 1,592 parts In-Stock

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$52.750

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TANS Electronics

Latvia . 5,544 parts In-Stock

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Problanco Electronics

Mexico . 5,415 parts In-Stock

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Continental Prestige Electronics

USA . 5,191 parts In-Stock

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Argo Parts USA

USA . 4,331 parts In-Stock

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SupplyDigital Components

Austria . 3,218 parts In-Stock

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Corphita

USA . 1,801 parts In-Stock

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Kulean Microsystems

USA . 1,667 parts In-Stock

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Bastille Electronics

Australia . 750 parts In-Stock

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Advanced Electronics

New Zealand . 650 parts In-Stock

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UHIMA Technologies

Türkiye . 257 parts In-Stock

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Corohmni

South Africa . 169 parts In-Stock

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Overview

Capture every moment in stunning clarity with the MT9T031C12STC-DR image sensor by Onsemi. As a leader in imaging technology, Onsemi brings unparalleled quality and reliability to its products. Ideal for a wide range of applications, this image sensor offers crisp and detailed images, making it perfect for use in security cameras, drones, and medical imaging devices. Experience the value and benefits of superior image quality with the MT9T031C12STC-DR - your perfect solution for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 3.20X3.20

The small pixel size allows for high resolution image capture, resulting in clear and detailed images.

Maximum Supply Voltage: 3.6 V

The higher supply voltage provides more power for the sensor to operate efficiently and effectively.

Master Clock: 48 MHz

The high master clock speed enables fast and accurate capturing of images, reducing motion blur.

Body Width: 14.22 inch

The compact body width makes the sensor suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

The CMOS sensor type offers low power consumption and high image quality, making it a reliable choice for imaging applications.

Body Height: 2.25 mm

The low body height allows for easy integration into slim devices and applications.

Package Shape or Style: SQUARE

The square package shape provides a uniform and compact design, facilitating easy mounting and installation.

Minimum Supply Voltage: 3 V

The low minimum supply voltage ensures compatibility with a wide range of power sources, making it versatile for different applications.

Horizontal Pixel: 2048

The high number of horizontal pixels results in high-resolution images with detailed horizontal clarity.

Output Range: 0.30-3.30V

The wide output range allows for flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

The digital voltage output simplifies signal processing and reduces noise interference, resulting in cleaner image data.

Maximum Operating Current: 27.8 mA

The low maximum operating current indicates efficient power usage and prolonged battery life for portable devices.

Housing: CERAMIC

The ceramic housing provides excellent durability and stability, protecting the sensor from external impacts and environmental factors.

Dynamic Range: 61 dB

The high dynamic range allows the sensor to capture both bright and dark areas in the image with detail and clarity.

Vertical Pixel: 1536

The high number of vertical pixels results in high-resolution images with detailed vertical clarity.

Body Length/Diameter: 14.22 mm

The compact body length/diameter makes the sensor easy to handle, install, and integrate into various devices and systems.

Optical Format (inch): 1/2

The 1/2 inch optical format is a common and versatile size, offering compatibility with a wide range of lenses and imaging systems.

Termination Type: SOLDER

The solder termination type provides a reliable and secure connection for stable signal transmission and integration.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface type allows for easy connectivity and communication with other devices, enhancing the sensor's versatility and usability.

Frame Rate: 12 fps

The moderate frame rate provides smooth and fluid motion capture, suitable for a variety of applications including video recording and surveillance.

Array Type: FRAME

The frame array type enables efficient image capturing and processing, ensuring high-quality output and performance.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation on PCBs and other surfaces, making integration into devices quick and convenient.

Technical Specifications

Image Sensors MT9T031C12STC-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 3-3.60 V

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.25 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

61 dB

Frame Rate:

12 fps

Horizontal Pixel:

2048

Housing:

CERAMIC

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

27.8 mA

Optical Format (inch):

1/2

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.20X3.20

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

1536

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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