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MT9T031P12STC

Micron Technology

MT9T031P12STC by Micron Technology

Micron Technology's MT9T031P12STC image sensor features 3.2x3.2 um pixel size, 48 MHz master clock, and 2048 horizontal pixels. Ideal for applications requiring a digital voltage output interface, with a dynamic range of 61 dB and frame rate of 12 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 19,800 parts In-Stock

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Digiode

USA . 2,109 parts In-Stock

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Vyrian

USA . 1,717 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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ComSIT Distribution GmbH

Germany . 6 parts In-Stock

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ComSIT USA

USA . 6 parts In-Stock

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Continental Prestige Electronics

USA . 4,394 parts In-Stock

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Corphita

USA . 1,152 parts In-Stock

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Argo Parts USA

USA . 795 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Experience superior image quality and performance with the MT9T031P12STC Image Sensor by Micron Technology. As a leading manufacturer in the industry, Micron Technology ensures reliability and precision in every product. Ideal for applications such as security cameras, drones, and medical imaging, this sensor offers unparalleled value and benefits to customers. Capture crystal-clear images with ease and elevate your projects to the next level with the MT9T031P12STC. Choose Micron Technology for quality you can trust.

Feature Benefit Bullets

Pixel Size (um): 3.2X3.2

High resolution pixel size for clear and detailed image capture

Maximum Supply Voltage: 3.6 V

Ensures stable power supply for optimal sensor performance

Master Clock: 48 MHz

High clock speed allows for fast data processing

Body Width: 14.22 inch

Compact size for easy integration into various devices

Power Supplies (V): 3.3

Efficient power consumption at 3.3V for energy savings

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor provides high-quality image output

Body Height: 2.25 mm

Low profile design for versatile placement in different applications

Package Shape or Style: SQUARE

Square shape for easy mounting and alignment

Minimum Supply Voltage: 3 V

Wide supply voltage range for flexibility in power source

Maximum Operating Temperature: 60 °C

High temperature tolerance for use in varying environments

Horizontal Pixel: 2048

High pixel count for sharp and detailed horizontal image capture

Output Range: 0.13-2.82

Wide output range for capturing both bright and dark scenes accurately

Output Type: DIGITAL VOLTAGE

Digital output for easy integration with digital systems

Minimum Operating Temperature: 0 °C

Low temperature threshold for operation in colder environments

Terminal Finish: GOLD

Gold terminal finish for enhanced conductivity and durability

Maximum Operating Current: 54 mA

Low operating current for energy efficiency

Dynamic Range: 61 dB

Wide dynamic range for capturing details in both bright and dark areas

Vertical Pixel: 1536

High pixel count for sharp and detailed vertical image capture

Body Length/Diameter: 14.22 mm

Compact size for easy integration and space-saving design

Optical Format (inch): 1/2

Standard optical format for compatibility with various lenses

Data Rate: 48 Mbps

High data rate for quick transfer of image data

Termination Type: SOLDER

Solder termination for secure and reliable connections

Output Interface Type: 2-WIRE INTERFACE

2-wire interface for easy communication with external devices

Frame Rate: 12 fps

Decent frame rate for smooth video recording and playback

Array Type: SINGLE FRAME

Single frame array for simplified image processing

Mounting Feature: SURFACE MOUNT

Surface mount capability for easy installation on circuit boards

Technical Specifications

Image Sensors MT9T031P12STC attributes and parameters. Explore more Image Sensors devices from Micron Technology

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, GLOBAL SHUTTER

Array Type:

SINGLE FRAME

Body Width:

14.22 inch

Body Height:

2.25 mm

Body Length/Diameter:

14.22 mm

Data Rate:

48 Mbps

Dynamic Range:

61 dB

Frame Rate:

12 fps

Horizontal Pixel:

2048

JESD-609 Code:

e4

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

54 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1/2

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.2X3.2

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

GOLD

Termination Type:

SOLDER

Vertical Pixel:

1536

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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