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MT9V131C12STC-TR

Onsemi

MT9V131C12STC-TR by Onsemi

MT9V131C12STC-TR by Onsemi is a 640x480 CMOS image sensor with 5.60um pixel size and 27 MHz master clock. Ideal for digital cameras, it offers a dynamic range of 60 dB and operates at temperatures ranging from -20 to 70 °C.

Median Price

$0.680

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 1,000 parts In-Stock

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$0.680

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$0.680

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USA . 1,000 parts In-Stock

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Vyrian

USA . 8,815 parts In-Stock

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USA . 1,000 parts In-Stock

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Digiode

USA . 391 parts In-Stock

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Corohmni

South Africa . 304 parts In-Stock

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SupplyDigital Components

Austria . 5,662 parts In-Stock

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TANS Electronics

Latvia . 4,707 parts In-Stock

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Corphita

USA . 1,565 parts In-Stock

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Problanco Electronics

Mexico . 881 parts In-Stock

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Kulean Microsystems

USA . 50 parts In-Stock

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UHIMA Technologies

Türkiye . 42 parts In-Stock

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Overview

Capture vibrant images with the MT9V131C12STC-TR by Onsemi, a top-tier image sensor that offers unparalleled quality and performance. Manufactured by Onsemi, a leader in sensor technology, this product is perfect for applications in security systems, automotive cameras, and industrial imaging. With a high pixel resolution and digital voltage output, this sensor ensures crisp and clear images every time. Experience the value and benefits of this cutting-edge sensor today and elevate your imaging capabilities to new heights.

Feature Benefit Bullets

Pixel Size (um): 5.60X5.60

This small pixel size ensures high resolution images with sharp details.

Maximum Supply Voltage: 3.05 V

Allows for efficient power usage and prevents damage to the sensor.

Master Clock: 27 MHz

Provides fast data processing and real-time image capture capabilities.

Body Width: 11.43 inch

Compact size allows for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology offers high image quality with low power consumption.

Body Height: 2.3 mm

Slim profile enables installation in space-constrained applications.

Package Shape or Style: SQUARE

Square shape provides uniform mounting and alignment capabilities.

Minimum Supply Voltage: 2.55 V

Ensures stable operation at lower power input levels.

Maximum Operating Temperature: 70 °C

Can withstand high ambient temperatures for versatile usage scenarios.

Horizontal Pixel: 640

High pixel count delivers detailed and clear horizontal image resolution.

Output Range: 0.20-2.60V

Wide output range allows for flexible signal processing and compatibility.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data transmission and processing for seamless integration.

Minimum Operating Temperature: -20 °C

Can operate in cold environments without performance degradation.

Maximum Operating Current: 20 mA

Low power consumption ensures energy efficiency in prolonged use.

Housing: CERAMIC

Ceramic material offers durability and protection for the sensor components.

Dynamic Range: 60 dB

Wide dynamic range captures both bright and dark areas in a scene accurately.

Vertical Pixel: 480

Provides sufficient vertical resolution for detailed image capture.

Body Length/Diameter: 11.43 mm

Compact size enables easy integration and mounting in various devices.

Optical Format (inch): 1/4

1/4 inch format is widely compatible with different lenses and imaging systems.

Termination Type: SOLDER

Solder terminals ensure secure and reliable electrical connections.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with external devices.

Frame Rate: 30 fps

High frame rate allows for smooth and real-time image capture and video recording.

Array Type: FRAME

Frame array structure enables efficient image sensing and processing.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies installation and integration in compact devices.

Technical Specifications

Image Sensors MT9V131C12STC-TR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.3 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

60 dB

Frame Rate:

30 fps

Horizontal Pixel:

640

Housing:

CERAMIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

20 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.60X5.60

Sensors or Transducers Type:

Maximum Supply Voltage:

3.05 V

Minimum Supply Voltage:

2.55 V

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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