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MT9V024IA7XTM

Onsemi

MT9V024IA7XTM by Onsemi

MT9V024IA7XTM by Onsemi is an image sensor with 6x6 um pixel size, 27 MHz master clock, and 752 horizontal pixels. It operates at a voltage range of 3-3.6V and has a frame rate of 60 fps. Ideal for applications requiring high-resolution imaging in a compact form factor.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

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Vyrian

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Nova Conductors

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AZTECH Wire

Italy . 689 parts In-Stock

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Semicontronic

India . 778 parts In-Stock

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$52.750

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$51.431

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$51.168

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 5,636 parts In-Stock

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Kulean Microsystems

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Continental Prestige Electronics

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Argo Parts USA

USA . 4,239 parts In-Stock

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TANS Electronics

Latvia . 2,299 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Corphita

USA . 462 parts In-Stock

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Corohmni

South Africa . 379 parts In-Stock

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UHIMA Technologies

Türkiye . 319 parts In-Stock

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Kepictronics

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Problanco Electronics

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Overview

Capture every detail with the Onsemi MT9V024IA7XTM Image Sensor. With a pixel size of 6x6 um and a maximum supply voltage of 3.6V, this sensor delivers exceptional image quality for a wide range of applications. Whether you're developing a security system, medical imaging device, or industrial camera, this sensor offers unmatched performance and reliability. Trust Onsemi's expertise in image sensor technology to bring your vision to life. Experience the difference with the MT9V024IA7XTM and unlock endless possibilities in imaging innovation.

Feature Benefit Bullets

Pixel Size (um): 6X6

The small pixel size allows for high resolution image capture and detail.

Maximum Supply Voltage: 3.6 V

Ensures optimal performance without risk of damage from voltage spikes.

Master Clock: 27 MHz

High master clock frequency enables fast and accurate image processing.

Body Width: 9 inch

Compact size allows for easy integration into various devices and systems.

Power Supplies (V): 3.3

Efficient power supply for low power consumption and extended battery life.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS sensor technology provides high-quality image capture with low power consumption.

Body Height: 1.3 mm

Slim profile for versatile mounting options and space-saving designs.

Package Shape or Style: SQUARE

Square package shape allows for easy integration and alignment in a variety of applications.

Minimum Supply Voltage: 3 V

Wide range of supply voltage options for flexibility in device compatibility.

Maximum Operating Temperature: 105 °C

High maximum operating temperature tolerance ensures reliable performance in various environments.

Horizontal Pixel: 752

High horizontal pixel count for detailed and sharp image capture.

Output Range: 0.30-3V

Wide output range for compatibility with different signal processing systems.

Output Type: DIGITAL VOLTAGE

Digital voltage output for easier integration and processing of image data.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature tolerance for reliable performance in extreme cold conditions.

Maximum Operating Current: 60 mA

Low operating current for energy efficiency and reduced heat generation.

Dynamic Range: 100 dB

High dynamic range for capturing details in both dark and bright areas of an image.

Vertical Pixel: 480

Vertical pixel count for capturing clear and detailed images in portrait orientation.

Body Length/Diameter: 9 mm

Compact body size for easy integration and space-saving design.

Optical Format (inch): 1/3

Common optical format for compatibility with various lenses and optical systems.

Termination Type: SOLDER

Solder termination for secure and reliable connection in device assembly.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface for easy communication with external devices and systems.

Frame Rate: 60 fps

High frame rate for smooth and clear video recording and playback.

Array Type: FRAME

Frame array type for efficient image capture and processing.

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy and secure installation on PCBs and other surfaces.

Technical Specifications

Image Sensors MT9V024IA7XTM attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

100 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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