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MT9V022IA7ATM-TR

Onsemi

MT9V022IA7ATM-TR by Onsemi

MT9V022IA7ATM-TR by Onsemi is a 1/3 inch CMOS image sensor with 752x480 pixels, offering a max supply voltage of 3.6 V and operating temperature range from -40 to 85 °C. It features a digital current output type, dynamic range of 54.4 dB, and supports a frame rate of up to 60 fps, making it ideal for applications requiring high-quality imaging in various lighting conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,966 parts In-Stock

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Digiode

USA . 2,019 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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Advanced Electronics

New Zealand . 10 parts In-Stock

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$3.742

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$3.705

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$3.555

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10

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AZTECH Wire

Italy . 686 parts In-Stock

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$7.867

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Semicontronic

India . 696 parts In-Stock

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$17.750

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$17.306

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$17.218

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Ampacity Inc.

Singapore . 1,168 parts In-Stock

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$33.750

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Problanco Electronics

Mexico . 4,073 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

USA . 2,721 parts In-Stock

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TANS Electronics

Latvia . 2,096 parts In-Stock

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Kulean Microsystems

USA . 1,511 parts In-Stock

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Corphita

USA . 801 parts In-Stock

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Bastille Electronics

Australia . 650 parts In-Stock

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SupplyDigital Components

Austria . 565 parts In-Stock

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UHIMA Technologies

Türkiye . 524 parts In-Stock

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Corohmni

South Africa . 477 parts In-Stock

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Overview

Experience the cutting-edge technology of the MT9V022IA7ATM-TR image sensor by Onsemi. Known for their high-quality and reliable products, Onsemi continues to lead the industry in image sensors. This sensor offers unparalleled performance in a compact package, making it perfect for a wide range of applications. Whether you're capturing stunning images or improving machine vision systems, this sensor provides exceptional value with its advanced features and capabilities. Stay ahead of the curve with Onsemi's MT9V022IA7ATM-TR image sensor.

Feature Benefit Bullets

Pixel Size (um): 6X6

Smaller pixel size allows for higher resolution images with greater detail.

Maximum Supply Voltage: 3.6 V

Higher maximum supply voltage ensures stable performance and reliability.

Master Clock: 26.6 MHz

High master clock frequency enables fast data processing and image capture.

Body Width: 9 inch

Compact body width makes the sensor suitable for space-constrained applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology provides high sensitivity and low noise characteristics.

Body Height: 1.3 mm

Low body height allows for easy integration into various devices.

Package Shape or Style: SQUARE

Square package shape offers ease of handling and mounting during assembly.

Minimum Supply Voltage: 3 V

Low minimum supply voltage conserves power and extends battery life.

Maximum Operating Temperature: 85 °C

High maximum operating temperature range ensures performance in harsh environments.

Horizontal Pixel: 752

High horizontal pixel count provides detailed and sharp images.

Output Range: -9-9mA

Wide output range allows for flexibility in signal processing and interpretation.

Output Type: DIGITAL CURRENT

Digital current output simplifies signal processing and integration with digital systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality in cold environments.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

High-quality terminal finish enhances durability and conductivity for reliable connections.

Maximum Operating Current: 60 mA

High maximum operating current supports the sensor's performance under load conditions.

Dynamic Range: 54.4 dB

Wide dynamic range enables the sensor to capture both bright and dark areas with detail.

Vertical Pixel: 480

Sufficient vertical pixel count for capturing images with good resolution and clarity.

Body Length/Diameter: 9 mm

Compact body length/diameter facilitates easy integration and installation in devices.

Optical Format (inch): 1/3

Optical format of 1/3 inch provides compatibility with various lenses and optical systems.

Termination Type: SOLDER

Solder termination ensures secure connections for reliable electrical contact.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with external devices.

Frame Rate: 60 fps

High frame rate of 60 fps enables smooth and real-time image capture.

Array Type: FRAME

Frame array type facilitates efficient image processing and data handling.

Mounting Feature: SURFACE MOUNT

Surface mount capability allows for easy and secure mounting on PCBs and other surfaces.

Technical Specifications

Image Sensors MT9V022IA7ATM-TR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 3-3.60 V, IT ALSO HAVE DYNAMIC RANGE 80DB-100DB IN HIDY MODE

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

54.4 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

JESD-609 Code:

e1

Master Clock:

26.6 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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