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AR0135AT2M00XUEA0-TRBR

Onsemi

AR0135AT2M00XUEA0-TRBR by Onsemi

The Onsemi AR0135AT2M00XUEA0-TRBR image sensor features 1280x960 resolution, 3.75um pixel size, and 67.7dB dynamic range. Ideal for applications requiring high-quality digital imaging with a frame rate of 54fps in a compact square package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,406 parts In-Stock

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Digiode

USA . 1,584 parts In-Stock

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Native Components

USA . 152 parts In-Stock

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$9.229

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Northwest PG Solutions

USA . 786 parts In-Stock

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$10.152

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$9.137

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AZTECH Wire

Italy . 58 parts In-Stock

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$10.680

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 7,480 parts In-Stock

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SupplyDigital Components

Austria . 6,626 parts In-Stock

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TANS Electronics

Latvia . 1,970 parts In-Stock

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Problanco Electronics

Mexico . 1,131 parts In-Stock

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Corphita

USA . 727 parts In-Stock

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Corohmni

South Africa . 458 parts In-Stock

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UHIMA Technologies

Türkiye . 21 parts In-Stock

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Overview

Capture the world in stunning detail with the AR0135AT2M00XUEA0-TRBR Image Sensor by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers cutting-edge technology that pushes the boundaries of imaging capabilities. Ideal for a wide range of applications, this sensor offers exceptional value with its high performance and versatility. Whether you're in the automotive industry, surveillance, or consumer electronics, this sensor provides crystal-clear images with unmatched precision. Upgrade your products and elevate your brand with the AR0135AT2M00XUEA0-TRBR Image Sensor.

Feature Benefit Bullets

Pixel Size (um): 3.75

Small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 1.95 V

Low maximum supply voltage helps in reducing power consumption and extending battery life.

Master Clock: 50 MHz

High master clock frequency enables fast data processing and high frame rates.

Body Width: 9 inch

Compact body width makes the sensor suitable for integration into small form factor devices.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensor technology provides high-quality image capture with low power consumption.

Body Height: 1.39 mm

Slim body height allows for easy integration into thin devices or modules.

Package Shape or Style: SQUARE

Square package shape provides a symmetrical form factor for easier handling during assembly.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures reliable operation even under low power conditions.

Maximum Operating Temperature: 105 °C

High maximum operating temperature allows for reliable performance in various environmental conditions.

Horizontal Pixel: 1280

High horizontal pixel count enables higher resolution and detailed images.

Output Range: 0.40-2.5V

Wide output range provides flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL OUTPUT

Digital output simplifies signal processing and integration with digital systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures reliable performance in extreme cold environments.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

High-quality terminal finish enhances durability and reliability of the sensor connections.

Maximum Operating Current: 60 mA

Low maximum operating current helps in reducing power consumption and heat generation.

Dynamic Range: 67.7 dB

High dynamic range allows for capturing images with a wide range of brightness levels.

Vertical Pixel: 960

High vertical pixel count contributes to creating detailed and clear images.

Body Length/Diameter: 9 mm

Compact body length provides flexibility in design and integration into various devices.

Optical Format (inch): 1/3

1/3 inch optical format is a common standard, ensuring compatibility with many imaging systems.

Termination Type: SOLDER

Solder termination provides a reliable and secure connection for the sensor.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies the communication and data transfer process with external devices.

Frame Rate: 54 fps

High frame rate allows for capturing fast-moving objects or high-speed events with smooth video output.

Array Type: FRAME

Frame array type enables capturing complete images in a single shot for efficient image processing.

Sensitivity (V/lx.s): 3.22 V/lx.s

High sensitivity allows for capturing clear images even in low-light conditions.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies the assembly process and enables compact design integration.

Technical Specifications

Image Sensors AR0135AT2M00XUEA0-TRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.39 mm

Body Length/Diameter:

9 mm

Dynamic Range:

67.7 dB

Frame Rate:

54 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensitivity (V/lx.s):

3.22 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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