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KAI-04050-CBA-JB-B2

Onsemi

KAI-04050-CBA-JB-B2 by Onsemi

KAI-04050-CBA-JB-B2 by Onsemi is an image sensor with 5.5X5.5 um pixel size, 2336 horizontal pixels, and 1752 vertical pixels. It operates at temperatures from -50 to 70 °C and has a dynamic range of 64 dB. This CCD sensor is ideal for applications requiring high-quality imaging in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,487 parts In-Stock

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Digiode

USA . 1,245 parts In-Stock

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1,245

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Distributors (Availability)

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Kulean Microsystems

USA . 7,628 parts In-Stock

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7,628

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TANS Electronics

Latvia . 4,467 parts In-Stock

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SupplyDigital Components

Austria . 2,190 parts In-Stock

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Corphita

USA . 2,109 parts In-Stock

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Problanco Electronics

Mexico . 918 parts In-Stock

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Corohmni

South Africa . 370 parts In-Stock

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370

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UHIMA Technologies

Türkiye . 311 parts In-Stock

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Overview

Capture the essence of every moment with the Onsemi KAI-04050-CBA-JB-B2 Image Sensor. Crafted by a renowned manufacturer, this sensor delivers exceptional quality and reliability. Ideal for a wide range of applications, this sensor offers unparalleled value and benefits to customers seeking superior imaging solutions. Elevate your projects with the advanced technology and precision of the KAI-04050-CBA-JB-B2, setting new standards in image sensing technology.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Larger pixel size allows more light to be captured, resulting in better image quality and low-light performance.

Power Supplies (V): 15

Requires a standard power supply voltage, making it easy to integrate into existing systems.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors are known for their high-quality image capture and low noise, making this product ideal for professional imaging applications.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for efficient and compact integration into devices.

Maximum Operating Temperature: 70 °C

Can withstand high operating temperatures, suitable for a variety of environments and applications.

Horizontal Pixel: 2336

High horizontal pixel count provides detailed images with sharp resolution.

Minimum Operating Temperature: -50 °C

Provides a wide operating temperature range, enabling use in extreme conditions.

Dynamic Range: 64 dB

Good dynamic range allows for capturing both bright and dark areas in an image with detail.

Vertical Pixel: 1752

High vertical pixel count ensures excellent image quality and sharpness.

Termination Type: SOLDER

Solder termination offers a reliable and secure connection for long-term use.

Array Type: INTERLINE

Interline array type allows for fast readout speeds, beneficial for capturing moving subjects with precision.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting simplifies the installation process and provides a sturdy attachment for the sensor.

Technical Specifications

Image Sensors KAI-04050-CBA-JB-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Dynamic Range:

64 dB

Horizontal Pixel:

2336

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Termination Type:

SOLDER

Vertical Pixel:

1752

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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