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KAI-02150-AAA-JP-BA

Onsemi

KAI-02150-AAA-JP-BA by Onsemi

Onsemi's KAI-02150-AAA-JP-BA is a 2/3 inch CCD image sensor with 1920x1080 pixels, 5.5um pixel size, and 64dB dynamic range. Operating b/w -50 to 70°C, it requires 14.5-15.5V supply voltage and features through-hole mounting. Ideal for high-resolution imaging applications in various industries.

Median Price

$1,837.740

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 37 parts In-Stock

1+ parts

$1,837.740

100+ parts

$1,484.330

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37

$1,837.740

$1,484.330

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Arrow

USA . 37 parts In-Stock

1+ parts

$1,837.740

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$1,484.330

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37

$1,837.740

$1,484.330

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Distributors (In-Stock)

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Digiode

USA . 1,335 parts In-Stock

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$1,745.853

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1,335

$1,745.853

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Vyrian

USA . 4,670 parts In-Stock

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4,670

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Nova Conductors

Japan . 10 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 543 parts In-Stock

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$1,653.966

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543

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Corohmni

South Africa . 185 parts In-Stock

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$1,837.740

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185

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TANS Electronics

Latvia . 5,147 parts In-Stock

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Argo Parts USA

USA . 4,773 parts In-Stock

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SupplyDigital Components

Austria . 3,954 parts In-Stock

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Continental Prestige Electronics

USA . 2,381 parts In-Stock

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Kulean Microsystems

USA . 2,291 parts In-Stock

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Problanco Electronics

Mexico . 2,129 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 696 parts In-Stock

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696

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Overview

Elevate your imaging capabilities with the KAI-02150-AAA-JP-BA by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality image sensors that guarantee unmatched performance and reliability. This innovative product is perfect for a wide range of applications, providing crystal-clear images with exceptional detail and accuracy. Experience the value and benefits of this cutting-edge technology, whether you are in the medical, automotive, or industrial field. Trust Onsemi to bring you the best in image sensor technology.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 15.5 V

Higher supply voltage enables better performance and dynamic range in capturing images.

Power Supplies (V): 15

The 15V power supply ensures stable and reliable operation of the image sensor.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensors are known for their high quality image capture and sensitivity, making them ideal for various applications.

Package Shape or Style: RECTANGULAR

Rectangular package is easy to mount and integrate into different devices or systems.

Minimum Supply Voltage: 14.5 V

Having a minimum supply voltage of 14.5V ensures the image sensor can still operate under lower power conditions.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, this image sensor can perform well in various environmental conditions.

Horizontal Pixel: 1920

High horizontal pixel count allows for wider and clearer images to be captured.

Minimum Operating Temperature: -50 °C

The image sensor can still function in extremely cold temperatures, making it suitable for a wide range of applications.

Dynamic Range: 64 dB

A high dynamic range of 64dB ensures that both bright and dark areas in an image are captured accurately.

Vertical Pixel: 1080

High vertical pixel count ensures detailed and sharp images with good resolution.

Optical Format (inch): 2/3

The 2/3 inch optical format provides a good balance between sensor size and image quality.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections for the image sensor.

Array Type: INTERLINE

Interline array type is known for its fast readout speed and reduced blooming effect, making it suitable for capturing moving objects or scenes.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting allows for easy and secure installation of the image sensor on a PCB or other surface.

Technical Specifications

Image Sensors KAI-02150-AAA-JP-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Dynamic Range:

64 dB

Horizontal Pixel:

1920

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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