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KAI-01050-CBA-JD-BA

Onsemi

KAI-01050-CBA-JD-BA by Onsemi

KAI-01050-CBA-JD-BA by Onsemi is an image sensor with 5.5x5.5 um pixel size, 1024 horizontal and vertical pixels, and a dynamic range of 64 dB. It operates b/w -50 to 70 °C, with a supply voltage range of 14.5V to 15.5V. Ideal for applications requiring high-quality digital imaging in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,601 parts In-Stock

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Vyrian

USA . 632 parts In-Stock

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632

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Distributors (Availability)

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SupplyDigital Components

Austria . 4,388 parts In-Stock

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Problanco Electronics

Mexico . 3,186 parts In-Stock

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Kulean Microsystems

USA . 2,354 parts In-Stock

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TANS Electronics

Latvia . 2,306 parts In-Stock

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Corphita

USA . 1,867 parts In-Stock

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Corohmni

South Africa . 462 parts In-Stock

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UHIMA Technologies

Türkiye . 286 parts In-Stock

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Overview

Unleash the power of high-quality image sensing technology with the KAI-01050-CBA-JD-BA by Onsemi. As a leading manufacturer in the industry, Onsemi's Image Sensors offer top-notch performance and reliability. Ideal for a wide range of applications, this product provides unparalleled value and benefits to customers looking for superior image quality and precision. Whether you're capturing moments in photography or enhancing security systems, the KAI-01050-CBA-JD-BA is the perfect choice for all your imaging needs. Experience the difference with Onsemi Image Sensors today.

Feature Benefit Bullets

Pixel Size (um) 5.5X5.5

The small pixel size allows for high resolution images to be captured with clarity and detail.

Maximum Supply Voltage 15.5 V

The high maximum supply voltage provides sufficient power for the image sensor to operate effectively.

Body Width 20.07 inch

The compact body width makes the image sensor suitable for applications where space is limited.

Power Supplies (V) 15

The standard power supply voltage ensures compatibility with common power sources.

Sensors or Transducers Type IMAGE SENSOR,CCD

The CCD sensor type is known for producing high-quality images with low noise levels.

Body Height 3.33 mm

The low body height allows for easy integration into various systems and devices.

Package Shape or Style RECTANGULAR

The rectangular package shape simplifies the mounting and installation process of the image sensor.

Minimum Supply Voltage 14.5 V

The low minimum supply voltage helps in reducing power consumption and extends the battery life of devices.

Maximum Operating Temperature 70 °C

The high maximum operating temperature ensures the image sensor can be used in a wide range of environmental conditions.

Horizontal Pixel 1024

The high number of horizontal pixels contributes to capturing detailed and high-resolution images.

Output Type DIGITAL VOLTAGE

The digital voltage output simplifies the integration of the image sensor with digital systems and processing units.

Minimum Operating Temperature -50 °C

The low minimum operating temperature allows the image sensor to function reliably in cold environments.

Dynamic Range 64 dB

The wide dynamic range ensures that the image sensor can capture both dark and bright regions in a scene accurately.

Vertical Pixel 1024

The high number of vertical pixels enhances the image sensor's ability to capture detailed and sharp images vertically.

Body Length/Diameter 33.02 mm

The moderate body length/diameter provides a good balance between compactness and ease of handling/installation.

Optical Format (inch) 1/2

The optical format of 1/2 is a common standard that ensures compatibility with various lenses and optical systems.

Termination Type SOLDER

The solder termination type simplifies the connection and installation process of the image sensor.

Array Type INTERLINE

The interline array type provides fast readout speeds and is suitable for applications where capturing moving objects is crucial.

Mounting Feature THROUGH HOLE MOUNT

The through-hole mounting feature offers a secure and stable mounting option for the image sensor in various devices and systems.

Technical Specifications

Image Sensors KAI-01050-CBA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Height:

3.33 mm

Body Length/Diameter:

33.02 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1024

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1/2

Output Type:

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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