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AR0134CSSM00SUEA0-DPBR1

Onsemi

AR0134CSSM00SUEA0-DPBR1 by Onsemi

The Onsemi AR0134CSSM00SUEA0-DPBR1 is a 1/3 inch CMOS image sensor with a pixel size of 3.75um. It operates at a max supply voltage of 1.95V and has a master clock frequency of 50MHz. This sensor is commonly used in applications such as digital cameras, surveillance systems, and automotive imaging.

Median Price

$26.143

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

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Vyrian

USA . 8,127 parts In-Stock

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VNN

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Digiode

USA . 1,512 parts In-Stock

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Flip Electronics

USA . 1,300 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 85 parts In-Stock

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$2.660

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AZTECH Wire

Italy . 758 parts In-Stock

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$10.966

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Corohmni

South Africa . 386 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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$25.620

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$24.595

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Continental Prestige Electronics

USA . 5,342 parts In-Stock

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Ampacity Inc.

Singapore . 1,228 parts In-Stock

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$35.750

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Perfect Parts

USA . 7,860 parts In-Stock

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Problanco Electronics

Mexico . 6,743 parts In-Stock

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SupplyDigital Components

Austria . 5,829 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kulean Microsystems

USA . 4,332 parts In-Stock

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GreenTree Electronics

Israel . 2,860 parts In-Stock

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TANS Electronics

Latvia . 1,884 parts In-Stock

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Argo Parts USA

USA . 759 parts In-Stock

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UHIMA Technologies

Türkiye . 730 parts In-Stock

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Corphita

USA . 67 parts In-Stock

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Overview

Capture the world with exceptional clarity and precision using the AR0134CSSM00SUEA0-DPBR1 image sensor by Onsemi. As a leader in manufacturing cutting-edge technology, Onsemi delivers unmatched quality and reliability in every product. With its 1/3-inch optical format and 1280x960 pixel resolution, this image sensor offers unparalleled performance for various applications. From automotive to surveillance systems, the AR0134CSSM00SUEA0-DPBR1 ensures accurate capturing of images even in challenging conditions. Experience the value, benefits, and advantages that only Onsemi can provide, and elevate your imaging capabilities to new heights.

Feature Benefit Bullets

Pixel Size (um): 3.75

Smaller pixel size allows for higher resolution images to be captured, making this image sensor suitable for applications requiring detailed imaging.

Maximum Supply Voltage: 1.95 V

Low maximum supply voltage helps in reducing power consumption and heat generation, making this product energy efficient and reliable.

Master Clock: 50 MHz

High master clock frequency enables fast image processing and data transfer, ideal for applications where real-time imaging is required.

Package Shape or Style: SQUARE

Square package shape allows for easy integration and placement on circuit boards, maximizing space efficiency and simplifying assembly processes.

Dynamic Range: 64 dB

Wide dynamic range ensures accurate image capture in both bright and dark conditions, making this image sensor suitable for various lighting environments.

Technical Specifications

Image Sensors AR0134CSSM00SUEA0-DPBR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1V

Array Type:

SINGLE FRAME

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Data Rate:

700 Mbps

Dynamic Range:

64 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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