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KAF-39000-AAA-DD-AA

Onsemi

KAF-39000-AAA-DD-AA by Onsemi

The Onsemi KAF-39000-AAA-DD-AA image sensor features 6.8X6.8 um pixel size, 7216 horizontal pixels, and 5412 vertical pixels. Operating at temperatures from 0 to 60 °C, with a power supply of 15V, it is ideal for high-resolution imaging applications requiring THROUGH HOLE MOUNTing.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,063 parts In-Stock

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Vyrian

USA . 621 parts In-Stock

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621

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Distributors (Availability)

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TANS Electronics

Latvia . 7,651 parts In-Stock

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7,651

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Kulean Microsystems

USA . 7,505 parts In-Stock

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7,505

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SupplyDigital Components

Austria . 7,355 parts In-Stock

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Problanco Electronics

Mexico . 1,751 parts In-Stock

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Corphita

USA . 1,399 parts In-Stock

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UHIMA Technologies

Türkiye . 110 parts In-Stock

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Corohmni

South Africa . 80 parts In-Stock

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Overview

Capture the essence of every moment with the Onsemi KAF-39000-AAA-DD-AA image sensor. Crafted by the trusted manufacturer, Onsemi, this sensor promises top-notch quality and reliability. Ideal for a range of applications, this sensor offers unmatched value with its high resolution and superior performance. Whether you're capturing breathtaking landscapes or detailed portraits, this sensor delivers exceptional results every time. Elevate your imaging experience with the Onsemi KAF-39000-AAA-DD-AA.

Feature Benefit Bullets

Pixel Size (um): 6.8X6.8

The small pixel size allows for high resolution images to be captured with fine details, making this product suitable for applications where image quality is paramount.

Power Supplies (V): 15

The low power supply requirement of 15V makes this image sensor energy efficient and suitable for use in applications where power consumption needs to be minimized.

Maximum Operating Temperature: 60 °C

The high maximum operating temperature of 60 °C ensures that this image sensor can withstand thermal stress and operate reliably in various environments.

Horizontal Pixel: 7216

The high horizontal pixel count of 7216 enables this image sensor to capture wide, detailed images with high clarity, making it ideal for applications that require extensive image coverage.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0 °C allows this image sensor to function effectively even in cold conditions, making it versatile for use in different climates.

Vertical Pixel: 5412

The substantial vertical pixel count of 5412 ensures that this image sensor can capture images with good depth and clarity, making it suitable for applications that require detailed imaging from top to bottom.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature of this image sensor allows for easy and secure installation, making it convenient for integration into various devices and systems.

Technical Specifications

Image Sensors KAF-39000-AAA-DD-AA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Horizontal Pixel:

7216

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Pixel Size (um):

6.8X6.8

Power Supplies (V):

15

Sub-Category:

CCD Image Sensors

Vertical Pixel:

5412

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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