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MT9V032C12STC-TP

Onsemi

MT9V032C12STC-TP by Onsemi

Onsemi's MT9V032C12STC-TP is a 1/3-inch CMOS image sensor with 752x480 pixels, offering a pixel size of 6x6 um. It operates at a max supply voltage of 3.6V and has a master clock of 26.6 MHz. Ideal for applications requiring high-resolution imaging in devices such as surveillance cameras and industrial inspection systems due to its compact square package design and digital current output interface.

Median Price

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Lifecycle Status

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Vyrian

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AZTECH Wire

Italy . 648 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Corphita

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Kepictronics

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Corohmni

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Problanco Electronics

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UHIMA Technologies

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Overview

Unleash the power of cutting-edge technology with the MT9V032C12STC-TP Image Sensor by Onsemi. Crafted with precision and expertise, this high-quality sensor offers unrivaled performance and reliability in capturing crystal-clear images. Ideal for a wide range of applications, from surveillance systems to medical devices, this sensor provides exceptional value and benefits to customers looking for superior image quality and advanced functionalities. Say goodbye to blurry images and hello to sharp, detailed visuals with the MT9V032C12STC-TP Image Sensor by Onsemi.

Feature Benefit Bullets

Pixel Size (um): 6X6

The small pixel size enhances image resolution and detail, making this image sensor suitable for high-quality imaging applications.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage allows for efficient power usage and flexibility in different operating conditions.

Master Clock: 26.6 MHz

The high master clock frequency enables fast data processing and high frame rates, making this image sensor ideal for capturing fast-moving objects.

Body Width: 11.43 inch

The compact body width makes this image sensor easy to integrate into various devices and systems without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

The CMOS sensor technology ensures low power consumption and high sensitivity, providing excellent image quality in various lighting conditions.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature allows this image sensor to be used in a wide range of environments without overheating.

Horizontal Pixel: 752

The high number of horizontal pixels results in detailed and sharp images with high resolution, making this sensor ideal for applications requiring precise imaging.

Output Range: -9-9mA

The wide output range allows for accurate and versatile signal processing, making this image sensor suitable for various signal conditioning requirements.

Output Type: DIGITAL CURRENT

The digital current output type ensures reliable and consistent signal transmission, resulting in high-quality image data and improved performance.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature allows this image sensor to operate efficiently even in cold environments without compromising performance.

Dynamic Range: 54.4 dB

The high dynamic range enables this image sensor to capture a wide range of light intensities, resulting in well-exposed images with rich details.

Vertical Pixel: 480

The vertical pixel count contributes to the overall image resolution and quality, making this sensor suitable for applications requiring high-quality vertical image capture.

Body Length/Diameter: 11.43 mm

The compact body length/diameter facilitates easy integration and placement of this image sensor in a wide range of devices and systems.

Optical Format (inch): 1/3

The 1/3 optical format ensures compatibility with various lenses and optical systems, offering flexibility in image capture and processing.

Termination Type: SOLDER

The solder termination type provides a reliable and secure connection, ensuring stable performance and durability in different operating conditions.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies the connectivity and communication with other devices, enhancing the overall usability and compatibility of this image sensor.

Frame Rate: 60 fps

The high frame rate allows for smooth and real-time image capture, making this sensor suitable for applications requiring fast and dynamic image processing.

Array Type: FRAME

The frame array type offers efficient and organized pixel arrangement, resulting in consistent image quality and performance across the entire sensor surface.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation of this image sensor on PCBs and other surfaces, enhancing the overall reliability and durability of the system.

Technical Specifications

Image Sensors MT9V032C12STC-TP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER, IT ALSO HAVE DYNAMIC RANGE 80 DB-100 DB IN HDR MODE

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.3 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

54.4 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Housing:

CERAMIC

Master Clock:

26.6 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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