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KAI-16070-QXA-JD-AE

Onsemi

KAI-16070-QXA-JD-AE by Onsemi

KAI-16070-QXA-JD-AE by Onsemi is an image sensor with 7.4x7.4 um pixel size, 40 MHz master clock, and 70.5 dB dynamic range. Ideal for applications requiring high-resolution imaging in industrial cameras or surveillance systems due to its high-quality image output and efficient performance at temperatures ranging from -50 to 70 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,024 parts In-Stock

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Vyrian

USA . 234 parts In-Stock

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TANS Electronics

Latvia . 6,437 parts In-Stock

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Problanco Electronics

Mexico . 5,780 parts In-Stock

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Kulean Microsystems

USA . 5,161 parts In-Stock

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Corphita

USA . 2,456 parts In-Stock

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SupplyDigital Components

Austria . 1,634 parts In-Stock

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Corohmni

South Africa . 153 parts In-Stock

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UHIMA Technologies

Türkiye . 106 parts In-Stock

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Overview

Capture every moment in stunning clarity with the KAI-16070-QXA-JD-AE image sensor from Onsemi. Known for their high-quality products, Onsemi delivers exceptional performance and reliability in every sensor they produce. Ideal for a wide range of applications, this sensor offers unparalleled value, delivering crisp images with a wide dynamic range. Whether used in security cameras, scientific instruments, or industrial machinery, this sensor provides unmatched precision and detail, ensuring that every image is captured with perfection. Elevate your imaging experience with the KAI-16070-QXA-JD-AE and see the world in a whole new light.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Smaller pixel size allows for higher resolution images with finer details.

Maximum Supply Voltage: 15.5 V

Allows for flexible power supply options and compatibility with various systems.

Master Clock: 40 MHz

High master clock frequency enables faster data processing and image capture.

Body Width: 45.34 inch

Compact size for easy integration into different devices and systems.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors offer high-quality image capture and low noise performance.

Body Height: 3.61 mm

Slim profile for versatile installation and fitting in compact spaces.

Package Shape or Style: RECTANGULAR

Standard and common package style for easier handling and mounting.

Minimum Supply Voltage: 14.5 V

Can operate at lower supply voltage for energy efficiency and power savings.

Maximum Operating Temperature: 70 °C

Wide temperature range allows for use in various environmental conditions.

Horizontal Pixel: 4864

High horizontal pixel count provides detailed and sharp images.

Minimum Operating Temperature: -50 °C

Capable of operating in very low temperature environments for diverse applications.

Dynamic Range: 70.5 dB

Offers a wide dynamic range for capturing both bright and dark areas in a scene effectively.

Vertical Pixel: 3232

Significant vertical pixel count for capturing detailed and clear images.

Body Length/Diameter: 47.24 mm

Optimal size for balanced integration and space utilization in devices.

Optical Format (inch): 1.37

Standard optical format for compatibility with various lenses and imaging systems.

Termination Type: SOLDER

Solder termination for secure and reliable electrical connections.

Frame Rate: 8 fps

Decent frame rate for capturing motion and dynamic scenes effectively.

Array Type: INTERLINE

Interline array type for efficient light capture and reduced image lag.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting for secure and robust attachment to PCBs or mounting surfaces.

Technical Specifications

Image Sensors KAI-16070-QXA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 33 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT HAS OPTICAL FORMAT 1.37 INCH, IT HAS EXTENDED LINEAR DYNAMIC RANGE 82.5 DB

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.61 mm

Body Length/Diameter:

47.24 mm

Dynamic Range:

70.5 dB

Frame Rate:

8 fps

Horizontal Pixel:

4864

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1.37

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

3232

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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