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MT9V032C12STM-DP

Onsemi

MT9V032C12STM-DP by Onsemi

Onsemi's MT9V032C12STM-DP is a 1/3-inch CMOS image sensor with 6x6 um pixel size. It operates at 26.6 MHz master clock, offering 752 (H) x 480 (V) resolution for applications requiring high-quality digital imaging at up to 60 fps frame rate. Ideal for surface mounting in devices needing -30 to 70 °C temperature range and a dynamic range of 54.4 dB.

Median Price

$25.460

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Rochester

USA . 153 parts In-Stock

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$25.460

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$24.950

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$24.440

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$24.950

$24.440

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Nova Conductors

Japan . 100 parts In-Stock

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$15.818

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Vyrian

USA . 3,895 parts In-Stock

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Digiode

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Chip Stock

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Connector Distribution Corp

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Right Parts Inc.

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AZTECH Wire

Italy . 498 parts In-Stock

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$13.272

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Corohmni

South Africa . 236 parts In-Stock

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$15.502

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Continental Prestige Electronics

USA . 596 parts In-Stock

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$15.818

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Netroflash

USA . 500 parts In-Stock

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Ampacity Inc.

Singapore . 667 parts In-Stock

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$50.750

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Lixinc

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Problanco Electronics

Mexico . 6,868 parts In-Stock

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TANS Electronics

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Argo Parts USA

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S.R.D Solutions

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Austria . 1,465 parts In-Stock

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Perfect Parts

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 361 parts In-Stock

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Corphita

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Kepictronics

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Overview

Unleash the power of crystal-clear imaging with the MT9V032C12STM-DP by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge image sensors that set the standard for quality and performance. Ideal for a wide range of applications, this sensor captures every detail with precision and clarity. Experience enhanced image quality, reliable functionality, and seamless integration with the MT9V032C12STM-DP. Elevate your projects to the next level with this innovative solution that offers unmatched value and benefits to customers seeking top-tier imaging technology.

Feature Benefit Bullets

Pixel Size (um): 6X6

Small pixel size allows for high resolution images, making this sensor ideal for capturing detailed scenes.

Maximum Supply Voltage: 3.6 V

With a higher supply voltage, this sensor can provide more power for processing data, resulting in faster and more accurate image capture.

Master Clock: 26.6 MHz

A high master clock frequency enables quick data transfer and processing, ensuring real-time imaging capabilities.

Body Width: 11.43 inch

The wide body design accommodates a larger sensor array, allowing for greater light sensitivity and improved image quality.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption and high sensitivity, making this product energy-efficient and capable of capturing clear images in various lighting conditions.

Body Height: 2.3 mm

The slim body profile allows for easy integration into compact devices, making this sensor suitable for applications where size constraints are a concern.

Package Shape or Style: SQUARE

The square package shape provides a stable and uniform mounting surface, ensuring reliable performance in diverse environments.

Minimum Supply Voltage: 3 V

A low minimum supply voltage helps save power and prolong battery life, making this sensor suitable for portable devices.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this sensor can withstand harsh environmental conditions, ensuring reliable performance in challenging settings.

Horizontal Pixel: 752

The high horizontal pixel count results in wide image capture capabilities, making this sensor suitable for panoramic or wide-angle photography.

Output Range: -9-9mA

The wide output range allows for precise current measurement, ensuring accurate image reproduction and analysis.

Output Type: DIGITAL CURRENT

Digital current output simplifies data processing and enhances compatibility with modern imaging systems, making this sensor easy to integrate into existing setups.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature ensures reliable performance in cold environments, making this sensor versatile for use in various applications.

Maximum Operating Current: 60 mA

With a high operating current, this sensor can handle power-intensive tasks, making it suitable for continuous image capture and processing.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability, ensuring long-term reliability and consistent performance in challenging conditions.

Dynamic Range: 54.4 dB

A wide dynamic range enables the sensor to capture both bright and dark scenes accurately, making it suitable for high-contrast imaging applications.

Vertical Pixel: 480

The vertical pixel count determines the sensor's resolution and image quality, making this product ideal for capturing detailed vertical scenes.

Body Length/Diameter: 11.43 mm

The compact body size allows for versatile mounting options, making this sensor suitable for a wide range of applications.

Optical Format (inch): 1/3

The 1/3-inch optical format provides a good balance between sensor size and image quality, making this sensor suitable for various imaging tasks.

Termination Type: SOLDER

Solder termination ensures secure connections and reliable data transfer, making this sensor easy to install and maintain.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies data transmission and enhances compatibility with different devices, making this sensor versatile for integration into various systems.

Frame Rate: 60 fps

A high frame rate allows for smooth and fluid video recording, making this sensor suitable for dynamic imaging applications.

Array Type: FRAME

The frame array design enables simultaneous capture of multiple image frames, increasing efficiency and enhancing image processing capabilities.

Mounting Feature: SURFACE MOUNT

Surface mount compatibility simplifies installation and integration, making this sensor easy to incorporate into different electronic devices.

Technical Specifications

Image Sensors MT9V032C12STM-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER, IT ALSO HAVE DYNAMIC RANGE 80 DB-100 DB IN HDR MODE

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.3 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

54.4 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Housing:

CERAMIC

Master Clock:

26.6 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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