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KAI-02050-CBA-FD-AE

Onsemi

KAI-02050-CBA-FD-AE by Onsemi

Onsemi's KAI-02050-CBA-FD-AE is a 5.5x5.5 um CCD image sensor with 1684H x 1264V pixels, offering a dynamic range of 64 dB. Operating b/w -50 to 70 °C, it has a square ceramic housing and requires a supply voltage of 14.5-15.5 V. Ideal for applications requiring high-quality imaging in industrial and scientific fields.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,506 parts In-Stock

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Vyrian

USA . 1,497 parts In-Stock

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SupplyDigital Components

Austria . 7,680 parts In-Stock

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Problanco Electronics

Mexico . 6,239 parts In-Stock

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Kulean Microsystems

USA . 5,039 parts In-Stock

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Corphita

USA . 1,849 parts In-Stock

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TANS Electronics

Latvia . 375 parts In-Stock

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Corohmni

South Africa . 278 parts In-Stock

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UHIMA Technologies

Türkiye . 88 parts In-Stock

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Overview

Transform your imaging experience with the KAI-02050-CBA-FD-AE by Onsemi. As a leading manufacturer in image sensor technology, Onsemi brings you unparalleled quality and reliability in every product. The KAI-02050-CBA-FD-AE offers exceptional performance and versatility, making it ideal for a wide range of applications. Whether you're capturing stunning visuals in photography, enhancing security systems, or improving medical imaging, this image sensor delivers crisp, clear images with impressive detail. Elevate your projects with the advanced features and cutting-edge technology of the KAI-02050-CBA-FD-AE and unlock endless possibilities in the world of imaging.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage allows for greater flexibility in powering the sensor.

Body Width: 18.29 inch

Compact body width makes this sensor suitable for applications with limited space.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image capture capabilities.

Body Height: 2.94 mm

Low body height facilitates integration into thin devices or systems.

Package Shape or Style: SQUARE

Square package shape provides efficient use of space and ease of integration.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage helps in energy efficiency and extends battery life.

Maximum Operating Temperature: 70 °C

Wide operating temperature range allows for use in various environmental conditions.

Horizontal Pixel: 1684

Higher horizontal pixel count contributes to sharper and detailed images.

Minimum Operating Temperature: -50 °C

Ability to operate in extremely low temperatures makes this sensor versatile.

Housing: CERAMIC

Ceramic housing provides durability and resistance to temperature changes.

Dynamic Range: 64 dB

Wide dynamic range allows for capturing a greater range of light intensities.

Vertical Pixel: 1264

Higher vertical pixel count enables better image quality in terms of resolution and clarity.

Body Length/Diameter: 18.29 mm

Compact body length/diameter makes this sensor easy to integrate into various systems.

Optical Format (inch): 2/3

2/3 inch optical format is commonly used in professional cameras for high-quality images.

Termination Type: SOLDER

Solder termination provides reliable and secure connections in the assembly process.

Array Type: INTERLINE

Interline array type enables faster readout speeds and reduces image lag.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies the installation process and saves space.

Technical Specifications

Image Sensors KAI-02050-CBA-FD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

18.29 inch

Body Height:

2.94 mm

Body Length/Diameter:

18.29 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1684

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1264

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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