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KAI-02150-ABA-FD-AE

Onsemi

KAI-02150-ABA-FD-AE by Onsemi

The Onsemi KAI-02150-ABA-FD-AE is a 5.5x5.5 um CCD image sensor with 1920 (H) x 1080 (V) pixels, offering a dynamic range of 64 dB. Operating b/w -50 °C to 70°C, it has a supply voltage range of 14.5V to 15.5V and comes in a rectangular ceramic package. Ideal for applications requiring high-quality imaging in industrial and scientific fields.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 629 parts In-Stock

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Vyrian

USA . 606 parts In-Stock

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TANS Electronics

Latvia . 7,915 parts In-Stock

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Problanco Electronics

Mexico . 4,413 parts In-Stock

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Kulean Microsystems

USA . 3,804 parts In-Stock

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SupplyDigital Components

Austria . 3,612 parts In-Stock

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Corphita

USA . 692 parts In-Stock

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UHIMA Technologies

Türkiye . 327 parts In-Stock

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Corohmni

South Africa . 325 parts In-Stock

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Overview

Unleash the power of high-quality imaging with the KAI-02150-ABA-FD-AE by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers cutting-edge technology that provides exceptional clarity and resolution for a wide range of applications. Whether you're in the medical, automotive, or industrial industry, this CCD image sensor offers unparalleled performance and reliability. Elevate your imaging experience and capture every detail with the KAI-02150-ABA-FD-AE by Onsemi.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

A smaller pixel size allows for higher resolution images to be captured, making this image sensor ideal for applications where fine details need to be captured.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage allows for flexibility in power supply options and ensures stable performance even under varying power conditions.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensors are known for producing high-quality, low-noise images, making this image sensor a reliable choice for applications requiring excellent image quality.

Package Shape or Style: RECTANGULAR

The rectangular package shape makes it easy to integrate this image sensor into existing systems or designs, providing convenience and flexibility in installation.

Minimum Supply Voltage: 14.5 V

With a relatively low minimum supply voltage, this image sensor is energy-efficient and can operate effectively even with lower power input.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature range allows this image sensor to be used in various environmental conditions without compromising performance.

Horizontal Pixel: 1920

The high horizontal pixel count provides detailed and high-resolution images, making this image sensor suitable for applications where image clarity is essential.

Minimum Operating Temperature: -50 °C

The wide minimum operating temperature range ensures that this image sensor can operate in extreme cold conditions without any performance issues, making it a versatile choice for diverse applications.

Housing: CERAMIC

A ceramic housing offers durability and robustness, protecting the internal components of the image sensor from environmental factors, making it suitable for rugged applications.

Dynamic Range: 64 dB

A high dynamic range ensures that this image sensor can capture a wide range of light intensities accurately, making it suitable for applications with varying lighting conditions.

Vertical Pixel: 1080

The high vertical pixel count contributes to the overall image quality and resolution, ensuring that this image sensor can capture detailed and sharp images.

Optical Format (inch): 2/3

The 2/3-inch optical format provides a good balance between sensor size and image quality, making this image sensor a versatile choice for various imaging applications.

Termination Type: SOLDER

Solder termination offers a secure and reliable connection, ensuring stable performance and durability in the long run, making this image sensor a dependable choice for continuous use.

Array Type: INTERLINE

Interline array type allows for faster image readout and improved image quality, making this image sensor suitable for applications where speed and image clarity are important.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature provides a secure and stable mounting option, ensuring that the image sensor remains firmly in place during operation, making it a reliable choice for long-term use.

Technical Specifications

Image Sensors KAI-02150-ABA-FD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Dynamic Range:

64 dB

Horizontal Pixel:

1920

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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