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KAI-02150-ABA-FD-BA

Onsemi

KAI-02150-ABA-FD-BA by Onsemi

Onsemi's KAI-02150-ABA-FD-BA is a 2/3 inch CCD image sensor with 1920x1080 pixels, 5.5um pixel size, and 64dB dynamic range. It operates b/w -50 to 70 °C, suitable for industrial imaging applications requiring high-resolution and low-light performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,782 parts In-Stock

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Digiode

USA . 654 parts In-Stock

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Problanco Electronics

Mexico . 5,075 parts In-Stock

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SupplyDigital Components

Austria . 4,349 parts In-Stock

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TANS Electronics

Latvia . 3,621 parts In-Stock

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Kulean Microsystems

USA . 1,703 parts In-Stock

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Corphita

USA . 579 parts In-Stock

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Corohmni

South Africa . 131 parts In-Stock

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UHIMA Technologies

Türkiye . 69 parts In-Stock

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Overview

Discover the cutting-edge technology of the KAI-02150-ABA-FD-BA by Onsemi, a high-quality image sensor that offers unparalleled performance. Manufactured by industry leader Onsemi, this sensor is designed for a wide range of applications in fields such as surveillance, medical imaging, and industrial inspection. With its advanced features and reliable functionality, this sensor provides customers with exceptional value, superior image quality, and precise data collection. Upgrade your imaging systems with the KAI-02150-ABA-FD-BA and experience the benefits of top-tier technology.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for high-resolution images to be captured with great detail, making this image sensor ideal for applications requiring high image quality.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage provides flexibility in power supply options, allowing for efficient performance and operation in various voltage environments.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors are known for their high-quality image capture and low noise levels, making them suitable for demanding imaging applications.

Package Shape or Style: RECTANGULAR

The rectangular package shape offers a compact design that can easily fit into different camera setups, making it a versatile choice for various applications.

Minimum Supply Voltage: 14.5 V

With a low minimum supply voltage requirement, this image sensor can operate efficiently even in low-power situations, ensuring reliable performance under various conditions.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature range allows this image sensor to function in harsh environments with elevated temperatures, making it suitable for a wide range of industrial applications.

Horizontal Pixel: 1920

The high number of horizontal pixels enables this image sensor to capture detailed and sharp images with high resolution, making it ideal for applications where image clarity is crucial.

Minimum Operating Temperature: -50 °C

With a low minimum operating temperature, this image sensor can withstand extremely cold conditions, ensuring reliable performance even in freezing environments.

Housing: CERAMIC

The ceramic housing provides durability and protection for the internal components, making this image sensor suitable for rugged environments or long-term use.

Dynamic Range: 64 dB

The high dynamic range of 64 dB allows this image sensor to capture both bright and dark areas in a scene with great detail, producing images with excellent contrast and color accuracy.

Vertical Pixel: 1080

The high number of vertical pixels contributes to the overall image quality by providing sharp and detailed images in the vertical direction, making this image sensor suitable for various imaging applications.

Optical Format (inch): 2/3

The 2/3-inch optical format offers compatibility with a wide range of lenses and optical systems, providing flexibility in designing camera setups for different applications.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections for the image sensor, enhancing its overall performance and longevity in use.

Array Type: INTERLINE

The interline array type enhances the speed and efficiency of image capture, making this image sensor suitable for applications requiring fast imaging processes.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature offers easy and secure installation of the image sensor onto circuit boards or camera systems, ensuring a stable and reliable connection for optimal performance.

Technical Specifications

Image Sensors KAI-02150-ABA-FD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Dynamic Range:

64 dB

Horizontal Pixel:

1920

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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