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AR0132AT6M00XPEA0-TPBR

Onsemi

AR0132AT6M00XPEA0-TPBR by Onsemi

The Onsemi AR0132AT6M00XPEA0-TPBR is a 1/3-inch CMOS image sensor with 1280x960 resolution, 3.75um pixel size, and 115dB dynamic range. It operates at -40 to 105°C, has a max supply voltage of 1.95V, and uses a digital output interface. Ideal for applications requiring high-resolution imaging in varying temperature conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 2,325 parts In-Stock

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Vyrian

USA . 2,189 parts In-Stock

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VNN

France . 619 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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AZTECH Wire

Italy . 736 parts In-Stock

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$18.700

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Ampacity Inc.

Singapore . 1,513 parts In-Stock

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$49.750

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Problanco Electronics

Mexico . 5,946 parts In-Stock

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Kulean Microsystems

USA . 3,762 parts In-Stock

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Continental Prestige Electronics

USA . 2,580 parts In-Stock

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Corphita

USA . 2,307 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Argo Parts USA

USA . 565 parts In-Stock

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UHIMA Technologies

Türkiye . 396 parts In-Stock

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TANS Electronics

Latvia . 251 parts In-Stock

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SupplyDigital Components

Austria . 172 parts In-Stock

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Corohmni

South Africa . 114 parts In-Stock

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Overview

Capture stunning images with the AR0132AT6M00XPEA0-TPBR Image Sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality sensors that excel in various applications. This image sensor offers a wide dynamic range of 115 dB, ensuring crystal-clear images in any lighting condition. With a compact square package and a high frame rate of 60 fps, this sensor is perfect for applications such as surveillance cameras, drones, and automotive systems. Trust Onsemi to provide innovative solutions that meet your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 3.75

Small pixel size allows for high resolution images to be captured

Maximum Supply Voltage: 1.95 V

Efficient power consumption at maximum voltage ensures longer battery life

Master Clock: 50 MHz

High clock frequency enables rapid image processing

Body Width: 9 inch

Compact size makes it suitable for various applications

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology provides high sensitivity and low noise performance

Output Type: DIGITAL VOLTAGE

Digital output simplifies interfacing with other digital systems

Frame Rate: 60 fps

High frame rate allows for smooth video capture

Technical Specifications

Image Sensors AR0132AT6M00XPEA0-TPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1 V; ELECTRONIC ROLLING SHUTTER

Array Type:

LINEAR

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Dynamic Range:

115 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

130 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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