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MT9M012D00STM

Onsemi

MT9M012D00STM by Onsemi

Onsemi's MT9M012D00STM image sensor features 2.2x2.2 um pixel size, 41 MHz master clock, and 1280x720 resolution. Ideal for digital cameras, surveillance systems, and industrial imaging applications due to its high sensitivity and frame rate capabilities.

Median Price

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Lifecycle Status

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1k+

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Digiode

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Vyrian

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Kulean Microsystems

USA . 6,563 parts In-Stock

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TANS Electronics

Latvia . 6,059 parts In-Stock

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SupplyDigital Components

Austria . 4,024 parts In-Stock

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Problanco Electronics

Mexico . 2,652 parts In-Stock

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Corphita

USA . 2,062 parts In-Stock

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Corohmni

South Africa . 181 parts In-Stock

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UHIMA Technologies

Türkiye . 89 parts In-Stock

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Overview

Capture every moment with the MT9M012D00STM image sensor by Onsemi. As a leader in image sensor technology, Onsemi delivers top-quality products that exceed expectations. This sensor is perfect for a wide range of applications, from security cameras to smartphones, offering unparalleled value and performance. With high-resolution capabilities and a wide dynamic range, this sensor ensures crystal-clear images in any environment. Trust Onsemi to provide you with the best in imaging technology.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

The small pixel size allows for high resolution image capture, making this product ideal for applications requiring detailed images.

Maximum Supply Voltage: 1.9 V

The higher supply voltage ensures reliable operation and performance of the image sensor.

Master Clock: 41 MHz

The high master clock frequency enables fast data readout and processing, resulting in efficient image capture.

Body Width: 6.351 inch

The compact body width makes this image sensor suitable for space-constrained designs and applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

The CMOS sensor type offers low power consumption and high sensitivity, making it a versatile choice for various imaging applications.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature allows for use in a wide range of environments without compromising performance.

Dynamic Range: 70.1 dB

The high dynamic range enables the sensor to capture a wide range of light intensities accurately, resulting in high-quality images.

Output Type: DIGITAL OUTPUT

The digital output simplifies data transmission and integration with digital systems, enhancing overall system efficiency.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature ensures reliable performance even in extreme cold conditions.

Frame Rate: 50 fps

The high frame rate allows for smooth and real-time image capture, making this sensor suitable for high-speed imaging applications.

Technical Specifications

Image Sensors MT9M012D00STM attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

6.351 inch

Body Height:

.212 mm

Body Length/Diameter:

6.748 mm

Data Rate:

82 Mbps

Dynamic Range:

70.1 dB

Frame Rate:

50 fps

Horizontal Pixel:

1280

Master Clock:

41 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4.5

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensitivity (V/lx.s):

1.4 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

720

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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