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NOIM2SM9600A-QDC

Onsemi

NOIM2SM9600A-QDC by Onsemi

NOIM2SM9600A-QDC by Onsemi is a 3840x2500 CMOS image sensor with 2.4x2.4 um pixel size, ideal for high-resolution imaging applications. It operates at 1.6-2V, with a master clock of 62 MHz and offers a dynamic range of 54 dB. The sensor has an SPI interface, supports up to 62 Mbps data rate, and can achieve a frame rate of 20 fps in a compact square package suitable for surface mounting.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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Mexico . 5,566 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 1,977 parts In-Stock

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UHIMA Technologies

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Overview

Unlock endless possibilities with the NOIM2SM9600A-QDC by Onsemi, a cutting-edge image sensor designed to deliver superior performance and reliability. With Onsemi's reputation for excellence in manufacturing, you can trust that this sensor will exceed your expectations. Ideal for a wide range of applications in industries such as automotive, security, and medical imaging, this sensor offers unparalleled value and efficiency. Experience crystal-clear images and seamless operation with the NOIM2SM9600A-QDC, the ultimate choice for your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 2.4X2.4

Small pixel size allows for high resolution images with fine details.

Maximum Supply Voltage: 2 V

Low maximum supply voltage for energy efficiency and less heat generation.

Master Clock: 62 MHz

Fast master clock speed enables quick image processing and data transfer.

Body Width: 19.05 inch

Compact body width for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology provides high image quality and low power consumption.

Package Shape or Style: SQUARE

Square package shape for efficient use of space and easy mounting.

Minimum Supply Voltage: 1.6 V

Low minimum supply voltage for energy efficiency and stable operation.

Maximum Operating Temperature: 70 °C

Wide operating temperature range for use in various environments.

Horizontal Pixel: 3840

High horizontal pixel count for detailed and high-resolution images.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature allows for use in cold environments.

Maximum Operating Current: 1.2 mA

Low maximum operating current for energy efficiency and prolonged battery life.

Housing: CERAMIC

Ceramic housing for durability and protection of internal components.

Dynamic Range: 54 dB

High dynamic range for capturing both bright and dark areas in an image.

Vertical Pixel: 2500

High vertical pixel count for detailed and sharp images.

Body Length/Diameter: 19.05 mm

Compact body size for easy integration into devices and systems.

Optical Format (inch): 2/3

2/3 inch optical format for compatibility with various lenses and optical systems.

Data Rate: 62 Mbps

High data rate for quick and efficient image transfer and processing.

Termination Type: SOLDER

Solder termination type for secure and reliable electrical connections.

Output Interface Type: SPI INTERFACE

SPI interface for easy integration with microcontrollers and other devices.

Frame Rate: 20 fps

Decent frame rate for smooth and real-time capture of moving objects.

Array Type: FRAME

Frame array type for capturing complete images in a single frame.

Mounting Feature: SURFACE MOUNT

Surface mounting feature for easy and secure attachment to PCBs.

Technical Specifications

Image Sensors NOIM2SM9600A-QDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3.1 TO 3.6 V SUPPLY VOLTAGE, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

19.05 inch

Body Length/Diameter:

19.05 mm

Data Rate:

62 Mbps

Dynamic Range:

54 dB

Frame Rate:

20 fps

Horizontal Pixel:

3840

Housing:

CERAMIC

Master Clock:

62 MHz

Mounting Feature:

Maximum Operating Current:

1.2 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

2/3

Output Interface Type:

SPI INTERFACE

Package Shape or Style:

Pixel Size (um):

2.4X2.4

Sensors or Transducers Type:

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

2500

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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