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KLI-8023-RAA-ED-AE

Onsemi

KLI-8023-RAA-ED-AE by Onsemi

KLI-8023-RAA-ED-AE by Onsemi is an Image Sensor with 9x9 um pixel size, 8002 horizontal and vertical pixels. It operates b/w 0 to 70 °C, with a dynamic range of 87 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

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< 1k

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Digiode

USA . 762 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 6,645 parts In-Stock

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Problanco Electronics

Mexico . 3,534 parts In-Stock

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Kulean Microsystems

USA . 3,067 parts In-Stock

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SupplyDigital Components

Austria . 2,688 parts In-Stock

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Corphita

USA . 749 parts In-Stock

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UHIMA Technologies

Türkiye . 341 parts In-Stock

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Corohmni

South Africa . 228 parts In-Stock

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Overview

Capture the world in stunning clarity with the KLI-8023-RAA-ED-AE by Onsemi. As a leading manufacturer of image sensors, Onsemi delivers top-notch quality and reliability. This highly advanced CCD sensor boasts a wide range of applications, from industrial to medical imaging. With a pixel size of 9X9 um and a dynamic range of 87 dB, this sensor offers unparalleled performance. Trust Onsemi to provide you with exceptional value and cutting-edge technology that will take your imaging projects to the next level.

Feature Benefit Bullets

Pixel Size (um): 9X9

Smaller pixel size allows for higher resolution and better image quality.

Maximum Supply Voltage: 15.5 V

Provides a wide range of operating voltage for versatility in different applications.

Body Width: 15.24 inch

Compact size makes it easy to integrate into various devices.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensors are known for their high-quality image capture capabilities.

Body Height: 6.1 mm

Low profile design for easy installation in tight spaces.

Package Shape or Style: RECTANGULAR

Sleek and modern design for a professional appearance.

Minimum Supply Voltage: 14.5 V

Ensures reliable operation even at lower voltages.

Maximum Operating Temperature: 70 °C

Wide temperature range for versatile use in different environments.

Output Range: 5.2-5.5V

Stable output voltage range for consistent performance.

Output Type: ANALOG VOLTAGE

Analog output for compatibility with a wide range of systems.

Minimum Operating Temperature: 0 °C

Can operate in low temperature environments without issues.

Housing: CERAMIC

Durable ceramic housing for long-lasting performance and protection.

Dynamic Range: 87 dB

High dynamic range for capturing both bright and dark details in an image.

Vertical Pixel: 8002

High pixel count for detailed vertical resolution in images.

Body Length/Diameter: 93.98 mm

Long body length for accommodating the sensor components.

Spectral Response (nm): 350-850

Wide spectral response range for capturing various types of light.

Data Rate: 6 Mbps

High data transfer rate for quick and efficient image processing.

Termination Type: SOLDER

Secure solder termination for reliable connections.

Array Type: LINEAR

Linear array configuration for easy integration into scanning systems.

Mounting Feature: THROUGH HOLE MOUNT

Convenient through-hole mounting for secure and stable attachment.

Technical Specifications

Image Sensors KLI-8023-RAA-ED-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 14 MICRO VOLT PER ELECTRON; IT ALSO HAVE DYNAMIC RANGE 82 DB

Array Type:

LINEAR

Body Width:

15.24 inch

Body Height:

6.1 mm

Body Length/Diameter:

93.98 mm

Data Rate:

6 Mbps

Dynamic Range:

87 dB

Horizontal Pixel:

8002

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Spectral Response (nm):

350-850

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

8002

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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