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KLI-8023-MAA-ED-AE

Onsemi

KLI-8023-MAA-ED-AE by Onsemi

KLI-8023-MAA-ED-AE by Onsemi is an Image Sensor with 9x9 um pixel size, 8002 horizontal pixels, and 87 dB dynamic range. It operates b/w 0 to 70 °C and outputs analog voltage in the range of 5.2-5.5V. Ideal for applications requiring high-resolution imaging with precise color reproduction and low light sensitivity.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,206 parts In-Stock

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Digiode

USA . 1,087 parts In-Stock

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TANS Electronics

Latvia . 3,995 parts In-Stock

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Kulean Microsystems

USA . 2,559 parts In-Stock

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Corphita

USA . 1,798 parts In-Stock

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SupplyDigital Components

Austria . 1,389 parts In-Stock

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Problanco Electronics

Mexico . 968 parts In-Stock

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UHIMA Technologies

Türkiye . 419 parts In-Stock

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Corohmni

South Africa . 318 parts In-Stock

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Overview

Experience crystal-clear imaging with the KLI-8023-MAA-ED-AE by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers top-notch quality and reliability. Ideal for a wide range of applications, this sensor offers exceptional value with its high resolution and precise output. Whether you're in the medical field, security industry, or aerospace sector, this sensor provides unparalleled performance that will exceed your expectations. Trust Onsemi to deliver cutting-edge technology that enhances your imaging experience.

Feature Benefit Bullets

Pixel Size (um): 9X9

Small pixel size allows for high resolution images to be captured with great detail.

Maximum Supply Voltage: 15.5 V

Allows for sufficient power supply to the image sensor for optimal performance.

Body Width: 15.24 inch

Compact size makes it suitable for installation in various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Uses CCD technology for high-quality image capture and processing.

Body Height: 6.1 mm

Slim profile enables easy integration into space-constrained designs.

Package Shape or Style: RECTANGULAR

Simplifies mounting and installation of the image sensor in devices.

Minimum Supply Voltage: 14.5 V

Ensures stable operation even at lower power supply levels.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures, making it suitable for various environmental conditions.

Horizontal Pixel: 8002

High pixel count allows for detailed and high-resolution image capture.

Output Range: 5.2-5.5V

Provides a stable output voltage range for reliable data transmission.

Output Type: ANALOG VOLTAGE

Analog output enables real-time signal processing and analysis.

Minimum Operating Temperature: 0 °C

Can operate in cold temperatures without compromising performance.

Housing: CERAMIC

Durable ceramic housing ensures long-term reliability and protection of internal components.

Dynamic Range: 87 dB

Wide dynamic range allows for capturing both bright and dark scenes with clarity.

Vertical Pixel: 8002

High pixel count in the vertical direction for detailed image capture.

Body Length/Diameter: 93.98 mm

Provides a good balance between compact size and effective image capture capabilities.

Spectral Response (nm): 350-850

Wide spectral response range allows for capturing images across various wavelengths.

Data Rate: 6 Mbps

High data rate enables fast and efficient transmission of image data.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections for long-term use.

Array Type: LINEAR

Linear array configuration allows for capturing images in a single line format.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature makes it easy to install and secure the image sensor in place.

Technical Specifications

Image Sensors KLI-8023-MAA-ED-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 14 MICRO VOLT PER ELECTRON; IT ALSO HAVE DYNAMIC RANGE 82 DB

Array Type:

LINEAR

Body Width:

15.24 inch

Body Height:

6.1 mm

Body Length/Diameter:

93.98 mm

Data Rate:

6 Mbps

Dynamic Range:

87 dB

Horizontal Pixel:

8002

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Spectral Response (nm):

350-850

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

8002

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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