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MT9J003I12STCU-DR

Onsemi

MT9J003I12STCU-DR by Onsemi

MT9J003I12STCU-DR by Onsemi is a 1/2.3" CMOS image sensor with 3856x2764 pixels, offering a dynamic range of 65.2 dB and digital output at 480 Mbps. It operates b/w -30 to 70 °C, with a supply voltage range of 1.7-1.9V, making it ideal for high-resolution imaging applications requiring fast frame rates up to 60 fps.

Median Price

$51.850

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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DigiKey

USA . 538 parts In-Stock

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USA . 538 parts In-Stock

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Vyrian

USA . 5,782 parts In-Stock

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Digiode

USA . 2,147 parts In-Stock

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USA . 538 parts In-Stock

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Corohmni

South Africa . 308 parts In-Stock

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TANS Electronics

Latvia . 8,095 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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SupplyDigital Components

Austria . 5,855 parts In-Stock

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Kulean Microsystems

USA . 4,450 parts In-Stock

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Corphita

USA . 2,061 parts In-Stock

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Problanco Electronics

Mexico . 1,523 parts In-Stock

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UHIMA Technologies

Türkiye . 241 parts In-Stock

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Overview

Capture the essence of every moment with the cutting-edge MT9J003I12STCU-DR image sensor by Onsemi. Renowned for its superior quality and precision engineering, this sensor is designed to revolutionize image capture in a wide range of applications. With advanced technology and exceptional performance, this sensor offers unrivaled value and benefits to customers, ensuring crystal-clear images and unparalleled reliability. Elevate your imaging experience with the MT9J003I12STCU-DR and discover a world of possibilities.

Feature Benefit Bullets

Pixel Size (um): 1.67X1.67

Smaller pixel size allows for higher resolution images to be captured with better detail.

Maximum Supply Voltage: 1.9 V

Allows for efficient power consumption and operation within safe voltage limits.

Master Clock: 48 MHz

High master clock speed enables fast data processing and image capture.

Body Width: 12 inch

Compact body width makes it suitable for various electronic devices and applications.

Minimum Operating Temperature: -30 °C

Operational in extreme low temperatures, making it versatile for different environments.

Output Type: DIGITAL OUTPUT

Digital output simplifies data processing and transmission.

Dynamic Range: 65.2 dB

Wide dynamic range allows for capturing high-quality images in different lighting conditions.

Data Rate: 480 Mbps

High data rate enables fast and efficient transfer of image data.

Frame Rate: 60 fps

High frame rate ensures smooth and clear image capture for moving objects.

Technical Specifications

Image Sensors MT9J003I12STCU-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE 2.4-3.1 V, ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

12 inch

Body Height:

1.35 mm

Body Length/Diameter:

12 mm

Data Rate:

480 Mbps

Dynamic Range:

65.2 dB

Frame Rate:

60 fps

Horizontal Pixel:

3856

Housing:

PLASTIC

JESD-609 Code:

e4

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

190 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

1.67X1.67

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Termination Type:

SOLDER

Vertical Pixel:

2764

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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