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AR0237ATSC00SUEA0-DR

Onsemi

AR0237ATSC00SUEA0-DR by Onsemi

Onsemi's AR0237ATSC00SUEA0-DR is a 3x3 um CMOS image sensor with 1928H x 1088V pixels, offering a dynamic range of 96 dB. Operating at -30 to 105 °C, it has a max supply voltage of 1.95 V and outputs digital voltage from 0.40-1.50V. Ideal for applications requiring high-resolution imaging at up to 60 fps in a compact square package shape for surface mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 1,680 parts In-Stock

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Kulean Microsystems

USA . 7,672 parts In-Stock

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TANS Electronics

Latvia . 5,853 parts In-Stock

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Northwest PG Solutions

USA . 1,872 parts In-Stock

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SupplyDigital Components

Austria . 1,578 parts In-Stock

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Corphita

USA . 1,512 parts In-Stock

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Problanco Electronics

Mexico . 1,161 parts In-Stock

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Native Components

USA . 622 parts In-Stock

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UHIMA Technologies

Türkiye . 317 parts In-Stock

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Corohmni

South Africa . 93 parts In-Stock

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Overview

Capture stunning images with the AR0237ATSC00SUEA0-DR image sensor by Onsemi. Known for its top-notch quality and reliability, Onsemi delivers cutting-edge technology in the field of image sensors. Whether you're designing a high-performance camera for security, automotive, or industrial applications, this sensor offers unmatched value with its high dynamic range, fast frame rate, and digital output interface. Elevate your product to the next level with the AR0237ATSC00SUEA0-DR and experience superior image quality like never before.

Feature Benefit Bullets

Pixel Size (um): 3X3

Small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 1.95 V

Higher maximum supply voltage allows for better performance and flexibility in powering the image sensor.

Master Clock: 48 MHz

High master clock frequency enables fast image processing and data transfer.

Body Width: 10 inch

Compact body width makes the image sensor suitable for various applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensor technology offers high sensitivity and low noise for quality image capture.

Body Height: 1.4 mm

Low body height allows for easy integration into slim devices or compact systems.

Package Shape or Style: SQUARE

Square package shape provides easy mounting and alignment in electronic circuit designs.

Minimum Supply Voltage: 1.7 V

Lower minimum supply voltage ensures efficient power consumption and prolongs battery life.

Maximum Operating Temperature: 105 °C

Wide operating temperature range allows the image sensor to be used in various environmental conditions.

Horizontal Pixel: 1928

High horizontal pixel count results in sharper and detailed images.

Output Range: 0.40-1.50V

Wide output voltage range provides flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and reduces interference.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature allows the image sensor to function in cold environments without issues.

Maximum Operating Current: 130 mA

Reasonable operating current ensures power efficiency and prevents overheating of the image sensor.

Dynamic Range: 96 dB

High dynamic range allows the image sensor to capture both dark and bright areas in a scene with detail.

Vertical Pixel: 1088

High vertical pixel count results in well-defined images with good clarity and depth.

Body Length/Diameter: 10 mm

Compact body length/diameter makes the image sensor easy to handle and install in various devices.

Optical Format (inch): 1/2.7

Standard optical format allows for compatibility with a wide range of lenses and optical systems.

Termination Type: SOLDER

Solder termination ensures secure electrical connections for reliable performance.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies integration and communication with other components in the system.

Frame Rate: 60 fps

High frame rate of 60 fps enables smooth and fluid video recording and playback.

Array Type: FRAME

Frame array structure allows for organized and systematic image capture and processing.

Mounting Feature: SURFACE MOUNT

Surface mount capability facilitates easy and secure attachment to circuit boards for robust electronic assemblies.

Technical Specifications

Image Sensors AR0237ATSC00SUEA0-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO OPERATES AT 2.8 NOMINAL ANALOG SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.4 mm

Body Length/Diameter:

10 mm

Dynamic Range:

96 dB

Frame Rate:

60 fps

Horizontal Pixel:

1928

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

130 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.7

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1088

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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