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NOIV1SE1300A-QDC

Onsemi

NOIV1SE1300A-QDC by Onsemi

NOIV1SE1300A-QDC by Onsemi features 4.80x4.80 um pixel size, 62 MHz master clock, and 1280 horizontal pixels. Ideal for image sensing applications with a dynamic range of 53 dB and frame rate of 150 fps.

Median Price

$4.340

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 154 parts In-Stock

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$4.340

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Flip Electronics

USA . 154 parts In-Stock

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$3.250

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Vyrian

USA . 6,342 parts In-Stock

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Digiode

USA . 530 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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ComSIT Distribution GmbH

Germany . 83 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,554 parts In-Stock

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$3.240

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Ampacity Inc.

Singapore . 78 parts In-Stock

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$3.690

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Corohmni

South Africa . 283 parts In-Stock

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$4.340

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AZTECH Wire

Italy . 225 parts In-Stock

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$11.504

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Problanco Electronics

Mexico . 8,181 parts In-Stock

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SupplyDigital Components

Austria . 4,259 parts In-Stock

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Kulean Microsystems

USA . 3,964 parts In-Stock

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Continental Prestige Electronics

USA . 3,902 parts In-Stock

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TANS Electronics

Latvia . 3,391 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Argo Parts USA

USA . 2,764 parts In-Stock

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UHIMA Technologies

Türkiye . 493 parts In-Stock

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Corphita

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Aranea Global

USA . 50 parts In-Stock

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Overview

Capture every moment in stunning clarity with the NOIV1SE1300A-QDC image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability. Ideal for a wide range of applications, this image sensor offers exceptional value with its high resolution and fast frame rate. Whether you're designing surveillance systems, medical imaging devices, or industrial cameras, this sensor provides the performance and precision you need to bring your vision to life. Trust Onsemi to elevate your imaging experience with the NOIV1SE1300A-QDC.

Feature Benefit Bullets

Pixel Size (um)

The small pixel size of 4.80X4.80 um allows for higher resolution and image quality.

Maximum Supply Voltage

Operates within a safe voltage range of up to 2 V, ensuring reliable performance.

Master Clock

High master clock frequency of 62 MHz enables fast data readout and processing.

Body Width

Compact body width of 14.22 inch for easy integration into various devices.

Power Supplies (V)

Efficient power usage with a low voltage requirement of 3.3 V.

Sensors or Transducers Type

Utilizes CMOS technology for improved sensitivity and signal processing.

Body Height

Low profile body height of 2.2 mm for slim device designs.

Package Shape or Style

Square package shape for simple and secure mounting.

Minimum Supply Voltage

Can operate at a low minimum voltage of 1.6 V, conserving power.

Maximum Operating Temperature

Wide operating temperature range of -40 to 85°C for versatility in various environments.

Horizontal Pixel

High-resolution horizontal pixel array of 1280 for detailed image capture.

Minimum Operating Temperature

Capable of functioning even in extremely low temperatures of -40°C.

Maximum Operating Current

Operates within an efficient current limit of 75 mA for power-saving operation.

Dynamic Range

Wide dynamic range of 53 dB for capturing both bright and dark areas accurately.

Vertical Pixel

Large vertical pixel array of 1024 for capturing detailed images in the vertical plane.

Body Length/Diameter

Compact body length/diameter of 14.22 mm for space-saving integration.

Optical Format (inch)

Utilizes a 1/2 inch optical format for compatibility with various lenses and optical systems.

Termination Type

Solder termination type for secure and reliable connections.

Output Interface Type

4-Wire interface for fast and efficient data transfer.

Frame Rate

High frame rate of 150 fps for smooth and high-speed image capture.

Array Type

Utilizes a frame array for efficient image processing and data handling.

Mounting Feature

Surface mountable design for easy installation and integration.

Technical Specifications

Image Sensors NOIV1SE1300A-QDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE SUPPLY VOLTAGE 3.0 TO 3.6 V, ALSO CURRENT CONSUMPTION 130 MA, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.2 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

53 dB

Frame Rate:

150 fps

Horizontal Pixel:

1280

Master Clock:

62 MHz

Mounting Feature:

Maximum Operating Current:

75 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

Other Sensors/Transducers

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

1024

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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