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NOIV1SN016KA-GDI

Onsemi

NOIV1SN016KA-GDI by Onsemi

NOIV1SN016KA-GDI by Onsemi is an image sensor with 4.5x4.5 um pixel size, 340 MHz master clock, and 4096 horizontal pixels. It operates b/w -40 to 85 °C and has a dynamic range of 56 dB. Ideal for applications requiring high-resolution imaging at a frame rate of 80 fps.

Median Price

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Lifecycle Status

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2

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Vyrian

USA . 8,882 parts In-Stock

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Digiode

USA . 1,538 parts In-Stock

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AZTECH Wire

Italy . 982 parts In-Stock

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Problanco Electronics

Mexico . 5,937 parts In-Stock

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TANS Electronics

Latvia . 4,035 parts In-Stock

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SupplyDigital Components

Austria . 3,791 parts In-Stock

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Corphita

USA . 1,179 parts In-Stock

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UHIMA Technologies

Türkiye . 981 parts In-Stock

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Kulean Microsystems

USA . 538 parts In-Stock

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Corohmni

South Africa . 456 parts In-Stock

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Overview

Capture life's unforgettable moments in stunning detail with the NOIV1SN016KA-GDI image sensor by Onsemi. Crafted with precision and expertise, this sensor delivers unparalleled performance for a wide range of applications. Whether you're capturing breathtaking landscapes or intricate details, this sensor offers exceptional value, superior benefits, and unmatched advantages to elevate your imaging experience. Trust in Onsemi's reputation for quality and reliability, and discover a new world of possibilities with the NOIV1SN016KA-GDI image sensor.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

High resolution and clarity for accurate image capture.

Maximum Supply Voltage: 2 V

Operates efficiently within a safe voltage range.

Master Clock: 340 MHz

High clock frequency for fast data processing.

Body Width: 36.1 inch

Compact size for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology for low power consumption and high image quality.

Package Shape or Style: RECTANGULAR

Standard shape for easy handling and mounting.

Minimum Supply Voltage: 1.6 V

Can operate at lower voltages for energy efficiency.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures for versatile applications.

Horizontal Pixel: 4096

High pixel count for detailed horizontal image capture.

Output Type: CURRENT OUTPUT

Current output for precise and stable signal transmission.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold conditions without issues.

Maximum Operating Current: 370 mA

Sufficient operating current for reliable performance.

Housing: CERAMIC

Durable ceramic housing for long-term use.

Dynamic Range: 56 dB

Wide dynamic range for capturing both bright and dark areas effectively.

Vertical Pixel: 4096

High pixel count for detailed vertical image capture.

Body Length/Diameter: 43.1 mm

Optimal size for easy installation and space-saving design.

Spectral Response (nm): 400-1000

Broad spectral response for capturing a wide range of colors.

Termination Type: SOLDER

Secure solder termination for stable connections.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface for efficient data transfer.

Frame Rate: 80 fps

High frame rate for smooth and clear image capture.

Array Type: FRAME

Frame array for organized and structured image capture.

Mounting Feature: THROUGH HOLE MOUNT

Easy and secure mounting option for stability.

Technical Specifications

Image Sensors NOIV1SN016KA-GDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

36.1 inch

Body Length/Diameter:

43.1 mm

Dynamic Range:

56 dB

Frame Rate:

80 fps

Horizontal Pixel:

4096

Housing:

CERAMIC

Master Clock:

340 MHz

Mounting Feature:

Maximum Operating Current:

370 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

4096

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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