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KAI-04050-ABA-JD-AE

Onsemi

KAI-04050-ABA-JD-AE by Onsemi

KAI-04050-ABA-JD-AE by Onsemi is a 5.5x5.5 um CCD image sensor with 2336 (H) x 1752 (V) pixels, offering a dynamic range of 64 dB. It features an interline array type and solder termination, suitable for applications in industrial imaging systems and machine vision cameras.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 2,053 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 8,299 parts In-Stock

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Kulean Microsystems

USA . 5,046 parts In-Stock

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Corphita

USA . 1,623 parts In-Stock

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TANS Electronics

Latvia . 1,272 parts In-Stock

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Authorized Procurement Solutions

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Corohmni

South Africa . 207 parts In-Stock

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UHIMA Technologies

Türkiye . 205 parts In-Stock

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Problanco Electronics

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Overview

Capture the world in stunning detail with the KAI-04050-ABA-JD-AE image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi's dedication to quality is evident in every pixel of this CCD sensor. With its high dynamic range and precise 5.5x5.5 um pixel size, this sensor is perfect for applications ranging from professional photography to medical imaging. Trust Onsemi to deliver top-notch performance and reliability, giving you the competitive edge you need in today's technology-driven world. Elevate your projects with the KAI-04050-ABA-JD-AE and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Smaller pixel size allows for higher resolution images and better detail.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high image quality and sensitivity, making them ideal for imaging applications.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easy integration into various devices and systems.

Horizontal Pixel: 2336

Higher number of horizontal pixels results in sharper and more detailed images.

Dynamic Range: 64 dB

A wide dynamic range allows for capturing details in both bright and dark areas of an image.

Vertical Pixel: 1752

Higher number of vertical pixels enhances image clarity and quality.

Termination Type: SOLDER

Solder termination ensures secure and reliable connection for long-term use.

Array Type: INTERLINE

Interline array type reduces image lag and distortion, resulting in smoother and more accurate images.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mount provides a sturdy and stable mounting option for the image sensor.

Technical Specifications

Image Sensors KAI-04050-ABA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Dynamic Range:

64 dB

Horizontal Pixel:

2336

Mounting Feature:

Optical Format (inch):

1

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

1752

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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