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MT9D115W00STCK25AC1-750

Onsemi

MT9D115W00STCK25AC1-750 by Onsemi

MT9D115W00STCK25AC1-750 by Onsemi is an image sensor with 1.75um pixel size, 1600x1200 resolution, and 85MHz master clock. Ideal for digital cameras, surveillance systems, and industrial imaging applications due to its high dynamic range and frame rate of 15fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,577 parts In-Stock

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Digiode

USA . 724 parts In-Stock

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AZTECH Wire

Italy . 979 parts In-Stock

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$19.920

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979

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TANS Electronics

Latvia . 7,723 parts In-Stock

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Kulean Microsystems

USA . 3,443 parts In-Stock

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Problanco Electronics

Mexico . 3,162 parts In-Stock

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SupplyDigital Components

Austria . 2,523 parts In-Stock

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Corphita

USA . 995 parts In-Stock

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995

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Corohmni

South Africa . 365 parts In-Stock

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UHIMA Technologies

Türkiye . 192 parts In-Stock

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Overview

Capture stunning images with the MT9D115W00STCK25AC1-750 by Onsemi, a top-of-the-line image sensor designed for high-quality performance. Onsemi is renowned for its cutting-edge technology and innovative solutions in the field of image sensors. This versatile sensor is perfect for a wide range of applications, from automotive cameras to security systems. With its superior quality and reliability, the MT9D115W00STCK25AC1-750 offers customers unmatched value, delivering crisp, clear images with exceptional detail and accuracy. Experience the benefits of this exceptional product and elevate your imaging capabilities to new heights.

Feature Benefit Bullets

Pixel Size (um) 1.75X1.75

The small pixel size allows for detailed and high-resolution images to be captured, making this product ideal for applications that require precise imaging.

Maximum Supply Voltage 1.95 V

The low maximum supply voltage ensures efficient power usage and can help extend the battery life of devices using this image sensor.

Master Clock 85 MHz

The high master clock frequency enables fast image capture and processing, making this product suitable for applications that require real-time image analysis.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption, high integration capabilities, and excellent image quality, making them a popular choice for various imaging applications.

Minimum Supply Voltage 1.7 V

The low minimum supply voltage ensures that the image sensor can operate efficiently even with limited power sources, making it versatile and suitable for a wide range of devices.

Horizontal Pixel 1600

The high number of horizontal pixels allows for wide and detailed image capture, making this product ideal for applications that require high-resolution images.

Output Type DIGITAL VOLTAGE

The digital voltage output simplifies the interface and signal processing, making it easier to integrate this image sensor into digital systems for efficient image capture and analysis.

Maximum Operating Current 70 mA

The low maximum operating current indicates efficient power usage and can help minimize heat generation, making this image sensor suitable for applications that require extended operation periods.

Dynamic Range 63.9 dB

The high dynamic range allows the image sensor to capture a wide range of light intensities accurately, resulting in detailed and high-quality images even in challenging lighting conditions.

Vertical Pixel 1200

The high number of vertical pixels enables detailed image capture and supports various aspect ratios, making this product versatile for different imaging applications.

Optical Format (inch) 1/5

The compact optical format makes this image sensor suitable for small and portable devices without compromising on image quality and performance.

Output Interface Type 2-WIRE INTERFACE

The 2-wire interface simplifies the communication and integration of the image sensor with other components, allowing for easy implementation in various systems and devices.

Frame Rate 15 fps

The frame rate of 15 fps provides a smooth and consistent video output, making this image sensor suitable for applications that require real-time video streaming or analysis.

Array Type FRAME

The frame array type enables efficient image capture and processing, allowing for seamless operation and high-quality image output in various applications.

Technical Specifications

Image Sensors MT9D115W00STCK25AC1-750 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.50-3.10 V ANALOG SUPPLY VOLATGE

Array Type:

FRAME

Dynamic Range:

63.9 dB

Frame Rate:

15 fps

Horizontal Pixel:

1600

Master Clock:

85 MHz

Maximum Operating Current:

70 mA

Optical Format (inch):

1/5

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Pixel Size (um):

1.75X1.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Vertical Pixel:

1200

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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