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MT9D015D00STCMC25BC1-200

Onsemi

MT9D015D00STCMC25BC1-200 by Onsemi

MT9D015D00STCMC25BC1-200 by Onsemi is an image sensor with 1.75um pixel size, 16 MHz master clock, and 1608 horizontal pixels. It operates b/w -30 to 70 °C and has a dynamic range of 62 dB. Ideal for digital cameras, surveillance systems, and industrial imaging applications due to its high resolution and frame rate of 30 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,829 parts In-Stock

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Digiode

USA . 1,764 parts In-Stock

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SupplyDigital Components

Austria . 7,311 parts In-Stock

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Kulean Microsystems

USA . 4,361 parts In-Stock

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Problanco Electronics

Mexico . 3,436 parts In-Stock

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TANS Electronics

Latvia . 2,265 parts In-Stock

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Corphita

USA . 1,267 parts In-Stock

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UHIMA Technologies

Türkiye . 853 parts In-Stock

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Corohmni

South Africa . 487 parts In-Stock

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Overview

Capture vibrant images with the MT9D015D00STCMC25BC1-200 image sensor by Onsemi. Known for their high-quality products, Onsemi delivers cutting-edge technology that exceeds expectations. This sensor is perfect for a wide range of applications, from security cameras to industrial automation systems. With a dynamic range of 62 dB and a frame rate of 30 fps, this sensor provides crystal-clear images in any environment. Trust Onsemi to provide you with the best image sensor on the market, offering unparalleled value and performance for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 1.75X1.75

This small pixel size allows for high resolution imaging and better image quality.

Maximum Supply Voltage: 1.9 V

Having a maximum supply voltage of 1.9V ensures efficient power consumption and compatibility with various systems.

Master Clock: 16 MHz

With a high master clock of 16 MHz, this sensor can capture fast-moving objects with clarity and precision.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors are known for their low power consumption and high sensitivity, making them an ideal choice for image sensors.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage of 1.7V ensures that the sensor can operate efficiently even in low power conditions.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70 °C allows the sensor to be used in a wide range of environmental conditions.

Horizontal Pixel: 1608

With 1608 horizontal pixels, this sensor can capture detailed and high-resolution images.

Output Type: DIGITAL CURRENT

The digital current output type provides accurate and reliable data transmission for further processing.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature of -30 °C ensures that the sensor can function even in extreme cold conditions.

Maximum Operating Current: 71 mA

The maximum operating current of 71 mA ensures efficient power consumption and prevents overheating.

Dynamic Range: 62 dB

A dynamic range of 62 dB provides a wide range of exposure levels for capturing both dark and bright areas in the image.

Vertical Pixel: 1208

With 1208 vertical pixels, this sensor can capture detailed and high-resolution images in the vertical direction.

Optical Format (inch): 1/5

The optical format of 1/5 inch allows for compatibility with various lenses and optical systems.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface type allows for easy integration with other systems and devices.

Frame Rate: 30 fps

With a frame rate of 30 fps, this sensor can capture smooth and fluid motion sequences.

Array Type: FRAME

The frame array type allows for efficient data capture and processing in a systematic manner.

Technical Specifications

Image Sensors MT9D015D00STCMC25BC1-200 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO OPERATES AT 2.8V ANALOG NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Dynamic Range:

62 dB

Frame Rate:

30 fps

Horizontal Pixel:

1608

Master Clock:

16 MHz

Maximum Operating Current:

71 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/5

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Pixel Size (um):

1.75X1.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Vertical Pixel:

1208

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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